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Home / Products  /  Discrete Semiconductor  /  FETs - Single  /  IRF7201TR
8-SOIC.jpg
Image shown is a representation only. Exact specifications should be obtain- ed from the product data sheet.

Infineon Technologies IRF7201TR

Manufacturer Part Number : IRF7201TR
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 30V 7.3A 8-SOIC
Lead Free Status / RoHS Status : Lead free / RoHS Compliant
Datasheet : IRF7201TR.PDF IRF7201TR PDF
Download Datasheet : IRF7201TR Details.PDF IRF7201TR PDF
EDA / CAD Models : IRF7201TR by SnapEDA
Quantity:
RFQAdd to RFQ List
287 295 6523480 http://www.irf.com/product-info/datasheets/data/irf7201.pdf Infineon-Technologies/IRF7201TR 6523480
Series:HEXFET?
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25～C:7.3A (Tc)
Rds On (Max) @ Id, Vgs:30 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:1V @ 250米A
Gate Charge (Qg) @ Vgs:28nC @ 10V
Input Capacitance (Ciss) @ Vds:550pF @ 25V
Power - Max:2.5W
Operating Temperature:-55～C ~ 150～C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO
Series: HEXFET?
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25～C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 1V @ 250米A
Gate Charge (Qg) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) @ Vds: 550pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55～C ~ 150～C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

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Technical Parameters of IRF7201TR

Series:HEXFET?
FET Type:MOSFET N-Channel, Metal Oxide
FET Feature:Standard
Drain to Source Voltage (Vdss):30V
Current - Continuous Drain (Id) @ 25～C:7.3A (Tc)
Rds On (Max) @ Id, Vgs:30 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id:1V @ 250米A
Gate Charge (Qg) @ Vgs:28nC @ 10V
Input Capacitance (Ciss) @ Vds:550pF @ 25V
Power - Max:2.5W
Operating Temperature:-55～C ~ 150～C (TJ)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:8-SO

Product Details

Series: HEXFET?
FET Type: MOSFET N-Channel, Metal Oxide
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25～C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V
Vgs(th) (Max) @ Id: 1V @ 250米A
Gate Charge (Qg) @ Vgs: 28nC @ 10V
Input Capacitance (Ciss) @ Vds: 550pF @ 25V
Power - Max: 2.5W
Operating Temperature: -55～C ~ 150～C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

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