The RM25C512C-L is a 512 Kbit SPI EEPROM featuring Adesto’s CBRAM® (Conductive Bridging RAM) technology, offering high-speed read/write, low power consumption, and exceptional durability. This device operates on a single power supply ranging from 1.65V to 3.6V and supports SPI modes 0 and 3, making it ideal for industrial control, IoT devices, and other low-power applications.
Designed for low-power IoT devices, industrial automation, wearables, and automotive electronics, the RM25C512C-L features a unique storage architecture that enhances write efficiency and ensures long-term data retention, even under harsh environmental conditions. Nantian Electronics has ample stock available—contact us today for inquiries and pricing!
Key Features
High-Performance Storage
512 Kbit non-volatile memory, suitable for critical data storage.
Supports up to 20MHz SPI clock speed, enabling fast data transfer.
Standard 4-wire SPI interface (SDI, SDO, SCK, CS) for seamless microcontroller compatibility.
Ultra-Low Power Design
Typical read current: 0.25mA, write current: 1mA.
Low-power standby mode with only 2.2µA consumption, ideal for battery-powered devices.
Byte write energy consumption of only 50nJ, significantly more efficient than traditional EEPROMs.
CBRAM® Technology Advantages
Independent byte write without requiring full-page erase, enhancing endurance.
Over 40 years of data retention, even at 125°C, ensuring long-term reliability.
100,000 write cycles, far exceeding traditional floating-gate EEPROMs.
Fast Write & Flexible Erase
Page Write (128 bytes) in just 3ms, 4–6 times faster than standard EEPROMs.
Byte Write completes within 60µs, optimizing data storage efficiency.
Supports both page erase (128 bytes) and full-chip erase, enhancing memory management flexibility.
Applications
Low-Power IoT Devices – Ideal for smart sensors, wearables, and battery-operated applications, extending battery life.
Industrial Control – Reliable storage solution for PLCs, data loggers, and embedded systems.
Wearable Technology – Perfect for smartwatches, medical monitoring devices, meeting compact and low-power requirements.
Automotive Electronics – Designed for high-temperature environments, suitable for infotainment systems and in-vehicle storage.
Packaging & Compatibility
Available in 8-pin SOIC and TSSOP packages, supporting standard PCB design for easy manufacturing and assembly.
Compatible with SPI modes 0 and 3, ensuring seamless integration into embedded systems, industrial controls, and consumer electronics, reducing development costs.
FAQ
1. What is the storage capacity and interface of the RM25C512C-LTAI-B?
The RM25C512C-LTAI-B is a 512 Kbit (64 KB) non-volatile EEPROM that uses the Serial Peripheral Interface (SPI) for data transmission. It supports SPI modes 0 and 3.
2. What is the operating voltage range of the RM25C512C-LTAI-B?
It operates within a voltage range of 1.65V to 3.6V, making it ideal for low-power applications.
3. How long can the RM25C512C-LTAI-B retain data?
The chip offers over 40 years of data retention, even at 125°C, ensuring long-term reliability.
4. What is the endurance of the RM25C512C-LTAI-B?
The RM25C512C-LTAI-B supports up to 100,000 write cycles, making it suitable for applications that require frequent data updates.
5. What are the main application scenarios for the RM25C512C-LTAI-B?
This chip is widely used in IoT devices, industrial control systems, wearable technology, and automotive electronics, where high endurance and low power consumption are essential.
6. Does the RM25C512C-LTAI-B support fast write operations?
Yes, it supports Page Write (128 bytes), which completes in just 3ms, significantly faster than traditional EEPROMs. It also supports Byte Write (60µs), offering flexible data storage options.