RF FETs

RF FETs, otherwise known as Radio Frequency Field-Effect Transistors, are a type of discrete semiconductor device that play a pivotal role in several modern electronics. They act as a switch or an amplifier within electronic circuits, regulating electrical behavior. These products, using voltage to control the flow of current, are integral for the function of devices varying from radios and televisions to essential telecommunications equipment. The nature and precision of RF FET's make them specifically apt for high-frequency applications like Wi-Fi, RF power amplifiers in wireless communication devices, radar systems, and satellite communications, where they ensure seamless and stable transmission.

The main characteristics of RF FETs include their high input impedance, which allows for excellent voltage control, and their ability to handle strong signal strength without distortion, thanks to their high power gain. Manufacturers like NXP Semiconductors, Infineon Technologies, and Qorvo are leading the market in RF FET production.

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Description
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MOSFET N-CH RF 12V 30MA SOT-343
RFQ
MOSFET N-CH RF 12V 30MA SOT-343
RFQ
MOSFET N-CH RF 20V 30MA SOT-23
RFQ
MOSFET N-CH DUAL 8V 25MA SOT363
RFQ
MOSFET N-CH DUAL 8V 25MA SOT363
RFQ
MOSFET N-CH 8V 40MA SOT343
RFQ
TRANS S-BAND PWR LDMOS SOM038
RFQ
TRANS L-BAND RADAR LDMOS SOM39
RFQ
RF PWR MOSFET 1000V 20A DIE
RFQ
TRANS 1030MHZ 1550W PEAK 50V
RFQ
TRANS 1030MHZ 1550W PEAK 50V
RFQ
IC RF PWR AMP 200W SOT1228B
RFQ
IC RF PWR AMP 200W SOT1228A
RFQ
FETS RF GAN 150V 3.1-3.5GHZ 55QP
RFQ
FET RF 2CH 110V 860MHZ
RFQ
FET RF 2CH 110V 860MHZ SOT539A
RFQ
TRANS 960-1215MHZ 1000W PEAK 50V
RFQ
TRANS 960-1215MHZ 1000W PEAK 50V
RFQ
TRANS 960-1215MHZ 1000W PEAK 50V
RFQ
FETS RF GAN 150V 2.7-3.1GHZ 55QP
RFQ
FET RF N-CH 150V 2.9GHZ 55-QP
RFQ
FET RF 2CH 110V 1.03GHZ NI1230H
RFQ
FET RF 2CH 110V 1.03GHZ NI1230H
RFQ
FET RF 2CH 110V 1.03GHZ NI-1230S
RFQ
FET RF 2CH 110V 1.03GHZ NI-1230
RFQ
FET RF 2CH 100V 1.4GHZ SOT502B
RFQ
 
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