Today, with the rapid development of power electronics technology, IGBT power modules, as key devices for achieving efficient power conversion, are widely used in many fields such as industrial automation and new energy. Infineon's BSM35GD120DN2 IGBT power module, with its excellent performance and reliable design, has become the preferred solution for many engineers and enterprises. This article will deeply analyze this product and comprehensively interpret its technical highlights and application value for you.
Core Parameters and Architecture of the Product
BSM35GD120DN2 is an IGBT power module built with advanced technology. It adopts a three - phase full - bridge structure and integrates fast - free - wheeling diodes. This design greatly simplifies the circuit layout and improves the integration and reliability of the system. The module has two packaging forms - ECONOPACK 2 and ECONOPACK 2K, corresponding to different order codes, which can meet diverse application requirements.
In terms of key parameters, its collector - emitter voltage is as high as 1200V, which can adapt to high - voltage working environments; the DC collector current is 50A at 25°C and 35A at 80°C, showing good temperature adaptability. The chip temperature can reach up to 150°C, and the storage temperature range is from - 40°C to + 125°C. It has a wide working range and can operate stably in a variety of complex environments. In addition, its insulation test voltage reaches 2500Vac, the creepage distance is 16mm, and the clearance is 11mm, showing excellent electrical safety performance.
BSM35GD120DN2 Parameter Information
| Parameter Category | Parameter Name | Symbol | Value | Unit |
|---|
| Voltage Parameters | Collector-Emitter Voltage | VCE | 1200 | V |
| | Collector-Gate Voltage (RGE = 20kΩ) | VCGR | 1200 | V |
| | Gate-Emitter Voltage | VGE | ±20 | V |
| | Insulation Test Voltage (t = 1min) | Vis | 2500 | Vac |
| Current Parameters | DC Collector Current (TC = 25°C) | IC | 50 | A |
| | DC Collector Current (TC = 80°C) | IC | 35 | A |
| | Pulsed Collector Current (tp = 1ms, TC = 25°C) | ICpuls | 100 | A |
| | Pulsed Collector Current (tp = 1ms, TC = 80°C) | ICpuls | 70 | A |
| Power and Thermal Parameters | Power Dissipation per IGBT (TC = 25°C) | Ptot | 280 | W |
| | Chip Temperature | Tj | +150 | °C |
| | Storage Temperature | Tstg | -40 ... +125 | °C |
| | Thermal Resistance from Chip to Case | RthJC | ?0.44 | K/W |
| | Thermal Resistance from Diode Chip to Case | RthJCD | ?0.8 | K/W |
| Other Parameters | Creepage Distance | - | 16 | mm |
| | Clearance | - | 11 | mm |
| | DIN Humidity Class | - | F sec | - |
| | IEC Climate Class | - | 40 / 125 / 56 | - |
BSM35GD120DN2 Package outline
BSM35GD120DN2 adopts a specific package outline. It is generally rectangular in shape, with a length of approximately 107.5, width - related dimensions such as 32.02 and 28.4, and a height of about 13.5. For the pins, diameters are specified as φ2.5 - 0.3, φ2.1 - 0.3, etc. Some dimensions are marked with tolerances. For example, the length is 93±0.15, and dimensions with an asterisk (*) have a tolerance of ±0.4. This packaging design facilitates installation and connection to external circuits, while ensuring the device’s mechanical stability and electrical insulation. Additionally, it belongs to the econo 2 - 2 packaging type, helping it adapt to corresponding devices and systems in practical applications.
BSM35GD120DN2 Circuit Diagram
This is the circuit schematic diagram of BSM35GD120DN2, showing its internal circuit structure. It adopts a three - phase full - bridge topology:
The symbol with an arrow in the diagram represents an Insulated Gate Bipolar Transistor (IGBT), and the diode symbol beside it indicates a free - wheeling diode. Each IGBT is reverse - parallel connected with a free - wheeling diode. Such a combination enables efficient power conversion and control. When the IGBT is turned off, the free - wheeling diode provides a free - wheeling path for the inductive load current, avoiding excessively high voltage spikes that could damage the device.
Excellent Electrical Performance Advantages
(1) Static Characteristics
The typical value of the gate threshold voltage of BSM35GD120DN2 is 5.5V. The collector current at zero gate voltage is strictly controlled at a low level under different temperatures. For instance, at 25°C, the maximum value of ICES is only 1mA, and at 125°C, it is 2.4mA. This effectively reduces the module’s static power consumption and improves energy utilization efficiency.
(2) AC Characteristics
In terms of AC characteristics, the minimum value of the transconductance (gfs) of this module is 11S, the typical value of the input capacitance (Ciss) is 2nF, the typical value of the output capacitance (Coss) is 0.3nF, and the typical value of the reverse - transfer capacitance (Crss) is 0.14nF. These parameters allow the module to achieve efficient current amplification and stable signal coupling during signal transmission and processing, reducing signal distortion and interference.
(3) Switching Characteristics
Switching characteristics are key indicators for measuring IGBT power module performance. Under inductive load and Tj = 125°C conditions, for BSM35GD120DN2, the typical value of the turn - on delay time (td (on)) is 60ns, the typical value of the rise time (tr) is 60ns, the typical value of the turn - off delay time (td (off)) is 400ns, and the typical value of the fall time (tf) is 50ns. The fast switching speed significantly reduces switching losses and enhances the system’s operating frequency and response speed, making it especially suitable for application scenarios with high requirements for efficiency and dynamic performance.
Application Scenarios
(1) Industrial Motor Drive
In the industrial motor drive field, BSM35GD120DN2 can provide a stable and efficient drive power supply for various motors. Its high - voltage and large - current carrying capacity can meet the drive requirements of high - power motors; excellent switching characteristics help achieve fast start, stop, and speed regulation of motors, improving production efficiency and equipment operational stability.
(2) New Energy Power Generation
With the rapid development of new energy sources like solar and wind energy, requirements for power conversion equipment are increasing. Relying on its high reliability and efficiency, BSM35GD120DN2 can be applied to the inverter in new energy power generation systems, converting unstable direct current into stable alternating current for grid - connection, providing strong support for large - scale new energy applications.
(3) Uninterruptible Power Supply (UPS)
In a UPS system, this module ensures a fast and stable switch to backup power when commercial power is interrupted, providing continuous power for critical equipment. Its good electrical performance and reliability can effectively reduce the UPS system’s failure probability, ensuring equipment normal operation and data security.
Substitute Products for BSM35GD120DN2
When exploring alternatives for the BSM35GD120DN2 IGBT power module, consider these compatible options tailored to specific voltage, current, or application needs. Always verify electrical and thermal compatibility with your system requirements before deployment:
Key Substitute Products:
| Substitute Product Name | Description |
|---|
| BSM35GD60DN2 | An IGCT (Integrated Gate - Commutated Thyristor) module with a dual - pack design, offering 600V voltage rating and 35A current capacity. While structurally similar to BSM35GD120DN2, it features a lower voltage tolerance, making it suitable for medium - voltage applications where 1200V is not required. |
| BSM50GD120DN2 | An IGBT module matching the 1200V voltage rating of the original but with a higher continuous current capacity of 50A (same as BSM35GD120DN2’s peak at 25°C). Ideal for applications needing identical voltage specs but slightly increased current handling, such as mid - range industrial drives or upgraded power conversion systems. |
| BSM75GD120DN2 | A high - performance IGBT module rated for 1200V and 75A, designed for demanding high - power scenarios like heavy - duty motor drives, large - scale renewable energy inverters, or industrial UPS systems. Its higher current rating allows it to handle sustained loads and transient surges more effectively than the standard BSM35GD120DN2. |
| IXYS VUO100 - 12NO7 | A rectifier diode module from IXYS, offering a 1200V voltage rating and 100A current capacity. While not an IGBT, it serves as a compatible replacement in circuits where diode - based rectification is sufficient (e.g., non - switching rectifier stages). Best suited for applications prioritizing reliability and brand diversity, though it lacks the switching capabilities of the original IGBT. |
| SEMIKRON SKM75GB123D | A renowned IGBT module from SEMIKRON with a 1200V, 75A rating, combining high current handling with excellent thermal performance. Its robust design and industry - trusted brand make it a top choice for critical applications requiring both high reliability and efficient heat dissipation, such as aerospace systems, medical equipment, or grid - tied energy storage inverters. |
Important Consideration:
Users must validate the electrical characteristics (e.g., voltage/current ratings, switching speeds) and thermal specifications (e.g., thermal resistance, heat sink compatibility) of substitute products against their specific application requirements. Always consult the manufacturer’s datasheet and conduct compatibility testing to ensure optimal performance and safety.
Selection and Usage Suggestions
When selecting the BSM35GD120DN2 IGBT power module, engineers need to comprehensively consider factors such as the voltage, current, power requirements, and working environment temperature of the actual application. At the same time, it is recommended to refer to the Safe Operating Area (SOA) curve in the product specification to ensure that the module operates within a safe range and avoid damage caused by overloading or other reasons.
Manufacturer Information
EUPEC (Opek) is a quite influential enterprise in the field of power semiconductors. It was formed by merging the two departments of Siemens and German AEG that produced power semiconductor devices in 1990. In fact, it has been operating power semiconductor devices for nearly fifty years. In 1999, it was spun off from Siemens and became a wholly - owned subsidiary of Infineon Technologies, which produces power semiconductors.
EUPEC's main products cover power semiconductor devices such as IGBT modules, thyristors, rectifier diodes, and silicon - controlled rectifiers. Its products adopt advanced technologies and processes. For example, thyristors and rectifier diodes use press - pack structure packaging. Compared with welded structures, they have a larger effective current and higher reliability. Moreover, high - voltage and high - power disk - type thyristors have strong competitiveness, and it is also a manufacturer that can provide highly reliable light - triggered thyristor (LTT) products.
Summary
The Infineon BSM35GD120DN2 IGBT power module occupies an important position in the field of power electronics with its excellent performance parameters, superior electrical characteristics, and wide application range. Whether in industrial automation, new energy power generation, or other fields with high requirements for power conversion, this product can provide users with reliable and efficient solutions. We hope that the introduction in this article can help you better understand and apply the BSM35GD120DN2. If you have more questions about the product or application requirements, welcome to leave a message and communicate in the comment section.
Key Questions
Why is the DC collector current of this IGBT power module different at different temperatures?
Answer: Because temperature will affect the performance of semiconductor devices. When the temperature rises, the carrier movement inside the device intensifies, which will lead to changes such as increased resistance, thus reducing the DC collector current that the module can withstand. For example, at 25°C, the DC collector current IC is 50A; at 80°C, IC drops to 35A.
What is the impact of the reverse - recovery time of the free - wheeling diode on the performance of the entire power module?
Answer: If the reverse - recovery time of the free - wheeling diode is too long, a relatively large reverse current spike and voltage overshoot will be generated during the reverse - recovery process. This may lead to an increase in the switching loss of the power module, a decrease in efficiency, and even possible damage to the module. The reverse - recovery time of the free - wheeling diode of this module is 0.25μs under specific conditions, which is relatively short and can reduce these adverse effects to a certain extent.