1MBI400NP - 120 IGBT Module: PDF Datasheet Analysis, Alternatives, and Key Applications

Dimensions Explanation of 1MBI 400NP - 120

• Overall Length: The 1MBI 400NP - 120 IGBT module has a length of $108\pm 1$ mm. This dimension is of great significance when integrating the 1MBI 400NP - 120 into a larger assembly or enclosure. The $\pm 1$ mm tolerance allows for manufacturing variations while still ensuring that the 1MBI 400NP - 120 can be properly accommodated and mated with other components.

• Overall Width: With a width of $62\pm 1$ mm, this measurement determines the footprint of the 1MBI 400NP - 120 on the circuit board or mounting surface. The tolerance in width, just like in length, accounts for manufacturing differences, facilitating consistent and reliable installation of the 1MBI 400NP - 120.

• Height: The height of the 1MBI 400NP - 120 is given as $25_{?0.8}^0$ mm. The negative tolerance of $0.8$ mm means the actual height can be up to $0.8$ mm less than the nominal $25$ mm. This is an important consideration for clearance in assemblies where the 1MBI 400NP - 120 is stacked or placed in close proximity to other components.

Mounting Hole Details of 1MBI 400NP - 120

• Hole Diameter: The 1MBI 400NP - 120 features a hole with a diameter of $?6.5$ mm. This hole is typically used for mechanical fastening, allowing screws to secure the 1MBI 400NP - 120 to a heat sink or the main chassis. The standard diameter ensures a secure and reliable connection, which is crucial for the stable operation of the 1MBI 400NP - 120.

• Thread Specifications
  

• M4: The 1MBI 400NP - 120 has M4 - sized threads, which indicate a metric thread with a nominal diameter of 4 mm. These are commonly used for lighter - duty mechanical connections in the 1MBI 400NP - 120, such as attaching small brackets or terminal covers that are related to its control functions.

• M6: The 1MBI 400NP - 120 also has M6 - sized threads (nominal diameter of 6 mm). These stronger threads are suitable for carrying heavier loads in the 1MBI 400NP - 120, perhaps for electrical connections handling higher currents or for providing a more robust mechanical attachment to the main structure of the device it's installed in.

• Hole Spacing
  

• Horizontal Spacing: Dimensions like $12\pm 0.2$ mm, $32\pm 0.2$ mm, $29\pm 0.2$ mm, and $93\pm 0.2$ mm define the precise distances between holes in the horizontal direction for the 1MBI 400NP - 120. The tight $\pm 0.2$ mm tolerances are essential for accurate alignment of the 1MBI 400NP - 120 with other components during assembly, ensuring proper fit and functionality.

• Vertical Spacing: The dimension $48\pm 0.2$ mm specifies the vertical distance between certain holes or features of the 1MBI 400NP - 120. This is critical for ensuring the correct vertical positioning of the 1MBI 400NP - 120, which affects the alignment of its pins and the overall mechanical integrity of the assembly it's part of.

Pin Identifications of 1MBI 400NP - 120

• G (Gate): The Gate pin of the 1MBI 400NP - 120 is the control terminal. It is used to apply the electrical signal that controls the on - and - off - state of the IGBT within the 1MBI 400NP - 120. Precise control of the gate voltage is essential for the efficient operation of the 1MBI 400NP - 120 and for minimizing power losses during its operation.

• E (Emitter): The Emitter is one of the main current - carrying terminals of the IGBT in the 1MBI 400NP - 120. The presence of two Emitter pins in the 1MBI 400NP - 120 may be for design reasons like better current distribution or to provide redundant connections, enhancing the reliability of the 1MBI 400NP - 120.

• C (Collector): The Collector is the other main current - carrying terminal of the 1MBI 400NP - 120. Current enters the IGBT through the Collector and exits through the Emitter when the device in the 1MBI 400NP - 120 is turned on.

• P (Possible Function Pin): The "P" pin on the 1MBI 400NP - 120 may serve a specific function, such as a power - related connection (e.g., for power - sensing or a power - sharing function) or for monitoring purposes within the 1MBI 400NP - 120. Its exact function would typically be detailed in the datasheet of the 1MBI 400NP - 120.

Parameter Table of 1MBI 400NP - 120

Explanation of Key Parameters

1. Zero Gate Voltage Collector Current ($I_{CES}$): Under the conditions of $V_{GE}=0V$ and $V_{CE}=1200V$, $I_{CES}$ indicates the leakage current of the IGBT module in the off state. A lower $I_{CES}$ means better insulation performance when the module is not conducting. Excessive $I_{CES}$ can lead to unwanted current flow in the circuit, wasting power and potentially interfering with the normal operation of the circuit. In severe cases, it can even damage other components.

2. Gate - Emitter Threshold Voltage ($V_{GE(th)}$): When $V_{GE}$ reaches $V_{GE(th)}$, the IGBT starts to conduct. The accuracy and stability of this parameter are crucial for circuit control. If $V_{GE(th)}$ is inaccurate, it may cause the IGBT to turn on prematurely or with a delay, affecting the circuit's timing and performance. For example, in a motor control circuit, a deviation in $V_{GE(th)}$ can result in errors in motor starting and speed regulation, reducing the system's control accuracy.

3. Collector - Emitter Saturation Voltage ($V_{CE(sat)}$): Under the test conditions of $V_{GE}=15V$ and $I_C=400A$, $V_{CE(sat)}$ represents the voltage drop between the collector and emitter when the IGBT is conducting. According to the power formula $P=I\times V$, a lower $V_{CE(sat)}$ leads to lower power loss during conduction ($P_{on}=I_C\times V_{CE(sat)}$). In high - power applications like uninterruptible power supplies (UPS), a large amount of electrical energy passes through the IGBT module. A lower $V_{CE(sat)}$ can significantly reduce conduction losses, improve the system's energy efficiency, reduce heat generation, and extend the module's service life.

4. Turn - on Time ($t_{ON}$) and Turn - off Time ($t_{OFF}$): $t_{ON}$ is the time required for the collector current to rise to 90% of its steady - state value after applying a turn - on signal to the gate. $t_{OFF}$ is the time required for the collector current to drop to 10% of its steady - state value after applying a turn - off signal to the gate. In high - frequency switching applications such as switching power supplies, fast $t_{ON}$ and $t_{OFF}$ allow the IGBT to complete more switching operations per unit time, enabling higher - frequency switching. This not only increases the power density and reduces the size of the device but also lowers the energy loss during the switching process. Since each switch operation involves energy consumption, shorter switching times result in less loss.

5. Reverse Recovery Time ($t_{rr}$): When the internal diode of the IGBT module changes from forward conduction to reverse cut - off, it takes a certain amount of time to regain its reverse blocking ability, and this time is $t_{rr}$. In high - frequency circuits, $t_{rr}$ has a significant impact on circuit performance. A shorter $t_{rr}$ means less energy loss during the diode's reverse recovery process and less interference with other components in the circuit, effectively improving the circuit's stability and reliability. For example, in an inverter circuit, a shorter $t_{rr}$ can reduce harmonic interference and improve the quality of the output electrical energy.

6. Thermal Resistance ($R_{th(j?c)}$): Thermal resistance reflects the difficulty of heat transfer from the chip junction temperature ($T_j$) to the case temperature ($T_c$). In the 1MBI 400NP - 120, the thermal resistances of the IGBT and the diode are different, $0.04^{°}C/W$ and $0.12^{°}C/W$ respectively. A lower thermal resistance allows heat to dissipate more easily from the chip. During high - power operation, the IGBT module generates a large amount of heat due to conduction and switching losses. If the heat cannot be dissipated in time, the chip temperature will continue to rise. Once it exceeds the allowable range, the module's performance will decline and may even be damaged. Therefore, when designing the cooling system, thermal resistance is a key parameter. A low $R_{th(j?c)}$ helps with more efficient heat dissipation, ensuring the module's stability and reliability during high - power operation.

(I) Unique Design Features

1. Square RBSOA: The square Reverse Biased Safe Operating Area (RBSOA) offers distinct advantages. It enables the module to endure higher voltage and current stresses. In complex operating conditions, such as sudden voltage surges or large - scale current fluctuations, the square RBSOA significantly enhances the module's reliability. This design effectively reduces the risk of device damage, ensuring stable operation even in harsh electrical environments.

2. Low Saturation Voltage and Reduced Total Power Dissipation: A low saturation voltage directly cuts down on conduction losses. When the IGBT module is conducting, less power is wasted as heat. Mathematically, $P=V\times I$, where $V$ is the saturation voltage and $I$ is the current. With a lower $V$, the conduction power loss $P_{on}$ is reduced. This reduction in conduction losses leads to a decrease in total power dissipation, achieving energy - saving effects and enhancing the overall energy efficiency of the system.

3. Optimized FWD Characteristics and Minimized Internal Stray Inductance: The improved Forward - Diode (FWD) characteristics boost circuit performance. A better - performing FWD reduces the forward - voltage drop, which means less energy loss during forward - current flow. Minimizing internal stray inductance is also crucial. Stray inductance can cause electromagnetic interference (EMI) and slow down the switching speed. By minimizing it, the module can reduce EMI, allowing other components in the circuit to operate more stably, and increase the switching speed, improving the overall efficiency of high - frequency switching applications.

4. Overcurrent Limiting Function: The 1MBI 400NP - 120 module has an overcurrent limiting function that can handle 4 - 5 times the rated current. When a circuit fault occurs, such as a short - circuit or overloading, this function kicks in. It restricts the current to a safe level, protecting the IGBT module and other components in the system from being damaged by excessive current. This significantly enhances the system's stability and safety, ensuring continuous operation even in the face of electrical malfunctions.

(II) Performance Advantages in Practical Applications

1. High - Power Switching: In high - power switching applications, the square RBSOA allows the module to handle high - voltage and high - current switching operations with ease. The low saturation voltage reduces power losses during conduction, and the minimized stray inductance and fast switching times enable rapid and stable switching. This results in higher - efficiency power transfer, less energy waste, and increased reliability of high - power electrical systems.

2. Motor Control: For motor control, the low saturation voltage reduces the energy loss in the motor drive circuit, improving the motor's energy efficiency. The fast switching times ($t_{ON}$ and $t_{OFF}$) enable precise control of the motor's speed. In applications like variable - speed drives, the module can quickly adjust the motor's speed according to the load requirements. This not only enhances the motor's ?速 performance (speed - regulation performance) but also improves the overall system efficiency, reducing energy consumption and increasing productivity.

3. Uninterruptible Power Supply (UPS): In a UPS system, the square RBSOA and overcurrent - limiting function safeguard the module during power grid fluctuations or sudden load changes. The low saturation voltage and optimized FWD characteristics lower the system's power consumption, extending the battery life. When the mains power fails, the fast - switching times and low stray inductance ensure a seamless transition to battery power, providing a stable and continuous power supply to critical loads, such as servers in data centers. This helps prevent data loss and equipment damage, maintaining the normal operation of the entire system.

V. Selection and Usage Recommendations

(I) Analysis of Selection Key Points

1.Electrical Performance Matching

When choosing an IGBT module, electrical performance matching is crucial. First, you need to clearly define the voltage, current, and frequency requirements of the actual application. For example, if the operating voltage of the application scenario is around 1200V and the continuous operating current is close to 400A, the 1MBI400NP - 120 is an ideal choice. Its rated voltage is 1200V and the rated current reaches 400A, which can easily handle such working conditions and ensure stable operation. If the actual voltage or current exceeds the module's rated value, it will increase the risk of module damage and reduce system reliability. At the same time, it's important to pay attention to the frequency requirements. The dynamic parameters of this module, such as switching time, determine its performance at different frequencies. Only by ensuring that it can meet the application's frequency requirements can the module perform optimally.

2. Thermal Management Considerations

(II) Precautions for Use

1. Drive Circuit Design

2. System Protection Measures

Alternative Models

The 1MBI400NP - 120 is an IGBT module with a voltage rating of 1200V and a current rating of 400A. In practical applications, if this model cannot meet the requirements or there are supply issues, the following alternative models can be considered. These alternative models share certain similarities and compatibility with the original model in terms of electrical performance and packaging form.

• 2MBI400XHA170 - 50: Manufactured by Fuji Electric, it is often used in circuits with voltage and current requirements similar to those of the 1MBI400NP - 120. In some industrial motor control scenarios, when it is necessary to adapt to different voltage levels (such as around 1700V) while the current requirement remains around 400A, the 2MBI400XHA170 - 50 can be an alternative choice. It has similarities with the 1MBI400NP - 120 in terms of conduction characteristics and switching speed, and can well meet the application requirements of high - power switching and motor control. However, when selecting this model, attention should be paid to the matching of its voltage parameters.

• SKM400GB126D: Produced by Semikron, it, like the 1MBI400NP - 120, is suitable for a voltage environment of around 1200V, and its rated current is also close to 400A. In an uninterruptible power supply (UPS) system, if the supply of the 1MBI400NP - 120 is insufficient, the SKM400GB126D can be used as an alternative solution. Its internal structure and performance characteristics enable it to perform well in handling current changes and have strong anti - interference capabilities, ensuring stable switching and continuous power supply of the UPS system when the mains power is abnormal.

• FF300R12KE3: It is a product of Infineon. Its collector - emitter voltage can meet the working requirement of 1200V, and its current - carrying capacity can also meet the requirements of similar application scenarios. In high - power switching applications, the FF300R12KE3 has low conduction losses and fast switching speed, echoing the performance advantages of the 1MBI400NP - 120. When working in a high - frequency switching environment is required, it can replace the 1MBI400NP - 120, effectively reducing the energy losses of the system and improving the overall efficiency.