The FUJI 1MBI900V-120-50 is a high-power insulated-gate bipolar transistor (IGBT) module designed for demanding applications. Encased in a 62x108 mm package (M153), this single-configuration IGBT can handle a collector current (Ic) of 900A at 100°C, with a maximum current of 1.08kA at 25°C. It operates efficiently with a voltage rating of 1.2kV and a saturation voltage (VCE Sat) of 2.1V. The module includes an integrated diode, supports chassis mounting, and is part of FUJI's V Series technology, ensuring high performance. With an operational temperature range from -40°C to +150°C and a junction temperature (Tj) limit of 175°C, it provides reliable performance in extreme conditions. Additionally, it boasts a power dissipation capability of 4.28kW, making it suitable for high-power applications.
As a professional FUJI distributor, Nantian Electronics has a large number of 1MBI900V-120-50 in stock. We also provide 1MBI900V-120-50 parameters, 1MBI900V-120-50 Datasheet PDF and pin diagram instructions for download.
Application
Inverter for Motor Drive
AC and DC Servo Drive Amplifier
Uninterruptible Power Supply
Industrial machines, such as Welding machines
Features
Outline and Equivalent Circuit
The appearance and dimensions of 1MBI900V-120-50 are as follows:
The equivalent circuit diagram of 1MBI900V-120-50 is as follows. You can find the equivalent product of 1MBI900V-120-50 through its circuit diagram.
1MBI900V-120-50 equivalent circuit