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infienon/ff1200r12ie5
580702
TYPE | DESCRIPTION |
---|
Category | Discrete Semiconductor Products IGBT Modules |
Mfr | Infineon Technologies |
Series | PrimePACK™2 |
Package | Tray |
Product Status | Active |
IGBT Type | Trench Field Stop |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 2400 A |
Power - Max | 20 mW |
Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 1200A |
Current - Collector Cutoff (Max) | 5 mA |
Input Capacitance (Cies) @ Vce | 65.5 nF @ 25 V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 175°C |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
The Infineon FF1200R12IE5 is a high-power IGBT (Insulated Gate Bipolar Transistor) module designed for use in various applications such as energy generation, motor drives, and power conversion systems. Infineon Technologies AG is known for producing robust semiconductor products that cater to the needs of power electronics.
In stockFF1200R12IE5 Infineon
Here's an overview of the FF1200R12IE5:
Manufacturer: Infineon Technologies AG
Product Category: IGBT Modules
Configuration: Single
Voltage Rating: 1200 V (Volts)
Current Rating: 1200 A (Amperes)
Package / Case: Module
Key features typically include:
High current carrying capability.
Low on-state voltage drop due to conductivity modulation which leads to higher efficiency.
Fast switching characteristics compared to traditional power transistors like BJTs or MOSFETs.
Robust thermal management properties allowing it to operate at high temperatures reliably.
The "E" in the product code often denotes that this model includes an emitter-controlled diode, which can improve turn-off behavior — especially important in applications where efficient and reliable switching is critical.
This module would be used where there are significant demands on electrical performance, particularly where high currents and voltages are being switched or controlled — common examples might be wind turbines, train traction systems, or large industrial motors.
Please consult detailed datasheets from Infineon's official website or contact their support team for precise specifications and application guidance before using this component in your system designs.
INFINEON FF1200R12IE5 replacement model
The same series models of FF1200R12IE5 include: FF1200R12IE5P, FF1200R12IE5P_B2, FF1200R12IE5P_B11, FF1200R12IE5_S6, FF1200R12IE5P-2.
FF1200R12IE5 Same Series Model
The Infineon FF1200R12IE5 is an IGBT (Insulated Gate Bipolar Transistor) module. When looking for alternative models, it's important to consider similar electrical characteristics such as voltage rating, current rating, power handling, switching speed, and package type. Please note that while these alternatives may have similar specifications, their performance, thermal characteristics, and other factors can vary, so it's essential to review the datasheets for detailed information.
FF1200R12IE5 Product Information Label
Here are some alternative models to the Infineon FF1200R12IE5:
Fuji Electric - 2MBI1200VXB-170E-50: This is a high-power IGBT module with similar voltage and current ratings. Fuji Electric is known for their reliable power modules.
Mitsubishi Electric - CM1200HC-66H: This IGBT module offers similar voltage and current ratings. Mitsubishi Electric modules are widely used in various high-power applications.
Semikron - SKM1200GA12T4T: Another alternative with comparable specifications. Semikron is well-regarded for their power semiconductor solutions.
ABB - 5SNG 1200P170300: This model from ABB is an option with similar voltage and current capabilities, known for its robust performance in industrial applications.
Hitachi - NTB120N120SC1: A suitable alternative with comparable power ratings. Hitachi is known for their innovative and efficient power semiconductor devices.
ON Semiconductor - NGTB120N120FL3WG: ON Semiconductor offers this IGBT module as a potential alternative, known for efficiency and reliability.