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Infineon Technologies FZ1600R12KF4

Manufacturer Part Number : FZ1600R12KF4
Manufacturer : Infineon Technologies
Description : IGBT Modules 1200V 1600A
Lead Free Status / RoHS Status : Lead free / RoHS Compliant
Datasheet : FZ1600R12KF4.PDF FZ1600R12KF4 PDF
EDA / CAD Models : FZ1600R12KF4 by SnapEDA
Quantity:
483 484 607788 /datasheets/Modules/INFINEON-FZ1600R12KF4-917067.pdf infineon/fz1600r12kf4 607788
Product AttributeAttribute Value
Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:N
Product:IGBT Silicon Modules
Configuration:Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:1.2 kV
Collector-Emitter Saturation Voltage:2.7 V
Continuous Collector Current at 25 C:1.6 kA
Gate-Emitter Leakage Current:400 nA
Pd - Power Dissipation:10 kW
Package / Case:IHM
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 150 C
Brand:Infineon Technologies
Height:38 mm
Length:140 mm
Maximum Gate Emitter Voltage:20 V
Mounting Style:Chassis Mount
Product Type:IGBT Modules

Introduction to the FZ1600R12KF4

The FZ1600R12KF4 is a robust, high-power insulated gate bipolar transistor (IGBT) module from Infineon Technologies, designed for efficient power management and control in high-voltage applications. It caters to a broad spectrum of industrial uses, including but not limited to energy generation, heavy-duty motor drives, and power conversion systems. This module exemplifies Infineon's commitment to delivering high-performance, reliable solutions for complex electrical power challenges.

Infineon FZ1600R12KF4

Infineon FZ1600R12KF4

Key Specifications

This IGBT module boasts an impressive current capacity of 1600A and a maximum collector-emitter voltage of 1.2kV, enabling it to manage large power loads efficiently. Its collector-emitter saturation voltage stands at 2.7V, ensuring low power dissipation during operation. The module's design is optimized for high efficiency and reliability in demanding applications, featuring a collector-emitter leakage current of just 400nA and a substantial power dissipation capacity of 10kW.

Technology and Design

The FZ1600R12KF4 utilizes advanced IGBT technology to minimize conduction and switching losses, which enhances its overall efficiency and performance. Infineon's leading-edge semiconductor materials and manufacturing techniques are evident in this module, contributing to its exceptional electrical and thermal properties. The module is housed in an IHM package, designed for chassis mount, which facilitates efficient thermal management and simplifies installation in various industrial settings.

Thermal Management and Durability

Effective thermal management is crucial for the durability and reliability of power modules. The FZ1600R12KF4 is engineered to excel in thermal dissipation, ensuring stable operation across a wide temperature range from -40°C to +150°C. This wide operating temperature range, combined with its high power dissipation capability, makes the module suitable for high-demand environments, ensuring reliability and longevity.

Safety and Reliability

Safety and reliability are at the forefront of Infineon's design philosophy. The FZ1600R12KF4 meets rigorous international safety standards, providing peace of mind for users in critical power management applications. Its robust construction and advanced technology offer unmatched reliability and performance, solidifying its status as a trusted solution for industrial power systems.

Applications

Thanks to its versatile design and high performance, the FZ1600R12KF4 finds applications in a diverse range of sectors. It is ideally suited for renewable energy systems, such as solar inverters, high-power industrial drives, energy storage solutions, and electric vehicle charging stations. Its ability to handle significant power levels efficiently and reliably makes it a preferred choice for engineers and designers working on advanced power conversion and control systems.

Conclusion

The FZ1600R12KF4 from Infineon Technologies is a testament to the company's expertise in power electronics, offering a blend of high efficiency, reliability, and power handling capability. Its adoption in various industrial applications highlights its effectiveness in addressing the needs of contemporary high-power systems, reinforcing Infineon's role as a leading provider of semiconductor solutions.

Infineon Technologies is the manufacturer of the FZ1600R12KF4, which is available in stock at Nantian. The reference price for FZ1600R12KF4 can be found by referring to Infineon Technologies or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the FZ1600R12KF4 datasheet PDF and pin diagram description that are available for download.

FZ1600R12KF4 in Stock

FZ1600R12KF4 in Stock

The FZ1600R12KF4 has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.

All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to FZ1600R12KF4 could be downloaded from Nantian's platform.

Request for Quotation

Technical Parameters of FZ1600R12KF4

Product AttributeAttribute Value
Manufacturer:Infineon
Product Category:IGBT Modules
RoHS:N
Product:IGBT Silicon Modules
Configuration:Dual Common Emitter Common Gate
Collector- Emitter Voltage VCEO Max:1.2 kV
Collector-Emitter Saturation Voltage:2.7 V
Continuous Collector Current at 25 C:1.6 kA
Gate-Emitter Leakage Current:400 nA
Pd - Power Dissipation:10 kW
Package / Case:IHM
Minimum Operating Temperature:- 40 C
Maximum Operating Temperature:+ 150 C
Brand:Infineon Technologies
Height:38 mm
Length:140 mm
Maximum Gate Emitter Voltage:20 V
Mounting Style:Chassis Mount
Product Type:IGBT Modules

Product Details

Introduction to the FZ1600R12KF4

The FZ1600R12KF4 is a robust, high-power insulated gate bipolar transistor (IGBT) module from Infineon Technologies, designed for efficient power management and control in high-voltage applications. It caters to a broad spectrum of industrial uses, including but not limited to energy generation, heavy-duty motor drives, and power conversion systems. This module exemplifies Infineon's commitment to delivering high-performance, reliable solutions for complex electrical power challenges.

Infineon FZ1600R12KF4

Infineon FZ1600R12KF4

Key Specifications

This IGBT module boasts an impressive current capacity of 1600A and a maximum collector-emitter voltage of 1.2kV, enabling it to manage large power loads efficiently. Its collector-emitter saturation voltage stands at 2.7V, ensuring low power dissipation during operation. The module's design is optimized for high efficiency and reliability in demanding applications, featuring a collector-emitter leakage current of just 400nA and a substantial power dissipation capacity of 10kW.

Technology and Design

The FZ1600R12KF4 utilizes advanced IGBT technology to minimize conduction and switching losses, which enhances its overall efficiency and performance. Infineon's leading-edge semiconductor materials and manufacturing techniques are evident in this module, contributing to its exceptional electrical and thermal properties. The module is housed in an IHM package, designed for chassis mount, which facilitates efficient thermal management and simplifies installation in various industrial settings.

Thermal Management and Durability

Effective thermal management is crucial for the durability and reliability of power modules. The FZ1600R12KF4 is engineered to excel in thermal dissipation, ensuring stable operation across a wide temperature range from -40°C to +150°C. This wide operating temperature range, combined with its high power dissipation capability, makes the module suitable for high-demand environments, ensuring reliability and longevity.

Safety and Reliability

Safety and reliability are at the forefront of Infineon's design philosophy. The FZ1600R12KF4 meets rigorous international safety standards, providing peace of mind for users in critical power management applications. Its robust construction and advanced technology offer unmatched reliability and performance, solidifying its status as a trusted solution for industrial power systems.

Applications

Thanks to its versatile design and high performance, the FZ1600R12KF4 finds applications in a diverse range of sectors. It is ideally suited for renewable energy systems, such as solar inverters, high-power industrial drives, energy storage solutions, and electric vehicle charging stations. Its ability to handle significant power levels efficiently and reliably makes it a preferred choice for engineers and designers working on advanced power conversion and control systems.

Conclusion

The FZ1600R12KF4 from Infineon Technologies is a testament to the company's expertise in power electronics, offering a blend of high efficiency, reliability, and power handling capability. Its adoption in various industrial applications highlights its effectiveness in addressing the needs of contemporary high-power systems, reinforcing Infineon's role as a leading provider of semiconductor solutions.

Infineon Technologies is the manufacturer of the FZ1600R12KF4, which is available in stock at Nantian. The reference price for FZ1600R12KF4 can be found by referring to Infineon Technologies or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the FZ1600R12KF4 datasheet PDF and pin diagram description that are available for download.

FZ1600R12KF4 in Stock

FZ1600R12KF4 in Stock

The FZ1600R12KF4 has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.

All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to FZ1600R12KF4 could be downloaded from Nantian's platform.

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