IXFN280N085-2154031.jpg
IXFN280N085-2154031.jpg
287
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6566063
http://ixdev.ixys.com/DataSheet/DS98747B(IXFN280N085).pdf
ixys/ixfn280n085
6566063
| Series: | HiPerFET? |
| Diode Configuration: | MOSFET N-Channel, Metal Oxide |
| Diode Type: | Standard |
| FET Type: | 85V |
| IGBT Type: | 280A |
| Structure: | 4.4 mOhm @ 100A, 10V |
| Transistor Type: | 4V @ 8mA |
| Triac Type: | 580nC @ 10V |
| Type: | 19000pF @ 25V |
| Voltage: | 700W |
| Voltage - Breakover: | -55～C ~ 150～C (TJ) |
| Voltage - Off State: | Chassis Mount |
| Voltage - Zener (Nom) (Vz): | SOT-227-4, miniBLOC |
| Applications: | SOT-227B |
IXYS IXFN280N085 Overview
The IXFN280N085 is a high-power, N-channel enhancement mode MOSFET produced by IXYS, a well-known player in the power semiconductor industry. It is engineered to handle substantial power with a maximum continuous drain current of 280A and a maximum drain-to-source voltage of 85V. This device is optimized for high-efficiency and high-speed switching applications.
Technical Parameters
Key specifications of the IXFN280N085 include a low on-state resistance (Rds(on)) that enhances its efficiency by minimizing conduction losses and a fast switching capability that reduces switching losses. The device also features a maximum junction temperature of 175°C, allowing for operation in high-temperature environments, and a standard package designed for excellent thermal management.
Applications
The IXFN280N085 is suited for a variety of applications, particularly in the fields of power management and conversion. This includes renewable energy systems like solar inverters and wind power converters, electric vehicle charging stations, DC-DC converters, and high-power industrial motor drives.
Advantages
The key advantages of the IXFN280N085 are its high current handling capability, low on-state resistance, fast switching performance, and robust thermal characteristics. These features make it an excellent choice for systems that require reliable high-power switching with high efficiency.
Replacement Model for IXYS IXFN280N085
A suitable replacement for the IXYS IXFN280N085 would need to match or exceed the original device's specifications, including its drain-to-source voltage (Vds), continuous drain current (Id), gate charge (Qg), and on-state resistance (Rds(on)). One potential replacement is the Infineon Technologies' IRLS3036-7PPbF.
The IRLS3036-7PPbF offers a Vds of 60V and an Id of 195A, which, while slightly lower than the IXFN280N085, may still be sufficient for many applications. It also boasts a very low Rds(on) value of 1.5mΩ and a reasonable gate charge, which ensures high efficiency and fast switching. Furthermore, it comes in a 7-pin D2PAK package known for good thermal performance.
Before finalizing a replacement, it is crucial to review the application's specific requirements and ensure that the chosen replacement will not only fit in terms of electrical characteristics but also in terms of thermal management, package size, and pin configuration.
Similar Models to IXYS IXFN280N085
Identifying similar models to the IXYS IXFN280N085 requires evaluating several key specifications, including the drain-to-source voltage (VDS), continuous drain current (ID), total gate charge (Qg), and on-state resistance (RDS(on)). Here are some potential similar models from various manufacturers:
IXYS IXFN200N10T: This model offers a higher drain-to-source voltage of 100V with a continuous drain current of 200A. It is designed for high-efficiency applications and is part of the same IXFN series, ensuring similar performance and reliability.
IXYS IXFN200N085: The IXFN200N085 offers a slightly lower maximum continuous drain current of 200A but maintains the same 85V maximum drain-to-source voltage. It shares the same package type and is designed to provide comparable performance with a focus on high-speed switching and efficiency. The thermal and electrical characteristics are similar, ensuring that it can be used in the same thermal management infrastructure.
Infineon IRLS3036-7PPbF: Previously mentioned as a replacement, this MOSFET has a lower VDS of 60V but offers a high ID of 195A and a very low RDS(on). Its package and performance may be suitable for applications requiring fast switching and high efficiency.
ON Semiconductor NTB280N15T4G: With a VDS of 150V and an ID of 280A, this MOSFET provides higher voltage and current capabilities. It is suitable for high-power applications that require robust performance.