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Micron Technology MT29F2G01ABAGDWB-IT:G TR

Manufacturer Part Number : MT29F2G01ABAGDWB-IT:G TR
Manufacturer : Micron Technology
Description : IC FLASH 2GBIT 8UDFN
Lead Free Status / RoHS Status : Lead free / RoHS Compliant
Datasheet : MT29F2G01ABAGDWB-IT:G TR.PDF MT29F2G01ABAGDWB-IT:G TR PDF
Download Datasheet : MT29F2G01ABAGDWB-IT:G TR Details.PDF MT29F2G01ABAGDWB-IT:G TR PDF
EDA / CAD Models : MT29F2G01ABAGDWB-IT:G TR by SnapEDA
Quantity:
1 123 7462432 Micron-Technology-Inc/MT29F2G01ABAGDWB-IT-G-TR 7462432
Memory Type:Non-Volatile
Memory Format:FLASH
Technology:FLASH - NAND
Memory Size:2Gb (2G x 1)
Clock Frequency:-
Write Cycle Time - Word, Page:-
Access Time:-
Memory Interface:SPI
Voltage - Supply:2.7 V ~ 3.6 V
Operating Temperature:-40~C ~ 85~C (TA)
Mounting Type:Surface Mount
Package / Case:8-UDFN
Supplier Device Package:8-U-PDFN (8x6)

The MT29F2G01ABAGDWB-IT:G TR from Micron Technology is a high-capacity NAND Flash memory device, boasting a substantial 2Gb storage. Designed with a single bus width of x1, this product operates on an I/O voltage of 3.3V. The MT29F2G01ABAGDWB-IT:G TR leverages SPI (Serial Peripheral Interface) Flash technology, a popular choice for many manufacturers due to its simplicity and flexibility, making it an ideal solution for a wide variety of applications that require large amounts of non-volatile memory.

MT29F2G01ABAGDWB-IT:G Reel Label Picture

Another impressive feature of the MT29F2G01ABAGDWB-IT:G TR is its robust withstand in a wide temperature range of -40C to +85C, thereby enhancing its resilience in various environmental conditions. Despite its complex capabilities, this Micron flash memory does not include Power Loss Protection (PLP), indicating its energy efficiency. As a testament to Nantian Electronics' partnership with Micron Technology, they ensure a large stock of the MT29F2G01ABAGDWB-IT:G TR. For aid in integration and operation, Nantian Electronics provides detailed resources, such as the MT29F2G01ABAGDWB-IT:G parameters, datasheet PDF, and pin diagram instructions for download.

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Technical Parameters of MT29F2G01ABAGDWB-IT:G TR

Memory Type:Non-Volatile
Memory Format:FLASH
Technology:FLASH - NAND
Memory Size:2Gb (2G x 1)
Clock Frequency:-
Write Cycle Time - Word, Page:-
Access Time:-
Memory Interface:SPI
Voltage - Supply:2.7 V ~ 3.6 V
Operating Temperature:-40~C ~ 85~C (TA)
Mounting Type:Surface Mount
Package / Case:8-UDFN
Supplier Device Package:8-U-PDFN (8x6)

Product Details

The MT29F2G01ABAGDWB-IT:G TR from Micron Technology is a high-capacity NAND Flash memory device, boasting a substantial 2Gb storage. Designed with a single bus width of x1, this product operates on an I/O voltage of 3.3V. The MT29F2G01ABAGDWB-IT:G TR leverages SPI (Serial Peripheral Interface) Flash technology, a popular choice for many manufacturers due to its simplicity and flexibility, making it an ideal solution for a wide variety of applications that require large amounts of non-volatile memory.

MT29F2G01ABAGDWB-IT:G Reel Label Picture

Another impressive feature of the MT29F2G01ABAGDWB-IT:G TR is its robust withstand in a wide temperature range of -40C to +85C, thereby enhancing its resilience in various environmental conditions. Despite its complex capabilities, this Micron flash memory does not include Power Loss Protection (PLP), indicating its energy efficiency. As a testament to Nantian Electronics' partnership with Micron Technology, they ensure a large stock of the MT29F2G01ABAGDWB-IT:G TR. For aid in integration and operation, Nantian Electronics provides detailed resources, such as the MT29F2G01ABAGDWB-IT:G parameters, datasheet PDF, and pin diagram instructions for download.

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