The NT5AD512M16A4-HR by Nanya Technology Corporation is a high-performance memory component possessing an array of advanced features that maximize data integrity, DRAM access bandwidth, signal synchronization, reliability, and power efficiency. The issue of data integrity is addressed through features like Auto Self Refresh (ASR) by DRAM built-in TS and the Auto Refresh and Self Refresh modes. This product also provides for considerable DRAM Access Bandwidth by incorporating separated IO gating structures by Bank Groups, Self Refresh Abort functionality, and Fine Granularity Refresh.
Nanya Technology Corporation NT5AD512M16A4-HR Package Dimensions:
The product also prioritizes signal synchronization with Write Leveling via MR settings and Read Leveling via MPR. It offers enhanced reliability and error handling with mechanisms like Command/Address Parity, Databus Write CRC, MPR readout, Boundary Scan (X16), and Post Package Repair. Assuring excellent signal integrity, the product features internal VREFDQ training, Read Preamble Training, Gear Down Mode, Per DRAM Addressability and several other elements. In terms of power savings and efficiency, it comes with Power on Delivery (POD) with VDDQ termination, Command/Address Latency (CAL), Maximum Power Saving, and Low-power Auto Self Refresh.
Nanya Technology Corporation NT5AD512M16A4-HR Package Original Label
As a distributor, Nantian Electronics provide the NT5AD512M16A4-HR in substantial quantities, extending comprehensive support with detailed parameters, datasheet PDF, and pin diagram instructions for easy accessibility and efficient application.