BD50HC0MEFJ-ME2 Overview
The BD50HC0MEFJ-ME2 is a semiconductor device manufactured by Rohm Semiconductor. It is a high-performance, low on-resistance power MOSFET designed for various applications. This MOSFET offers excellent switching performance and efficient power dissipation, making it suitable for a wide range of electronic devices.
Technical Characteristics
Key technical characteristics of the BD50HC0MEFJ-ME2 include:
- Drain-Source Voltage: 100V
- Continuous Drain Current: 50A
- On-Resistance: 5.1mΩ
- Gate-Source Voltage (Threshold): ±20V
- Maximum Junction Temperature: 150°C
- Package: Power Multiwatt
Features and Advantages
The BD50HC0MEFJ-ME2 offers several features and advantages:
- Low On-Resistance: The MOSFET has a low on-resistance, allowing for efficient power delivery and reduced power losses.
- High Current Capacity: With a continuous drain current rating of 50A, this MOSFET can handle high currents, making it suitable for demanding applications.
- Good Switching Performance: The device exhibits fast switching characteristics, enabling quick on/off transitions and minimizing switching losses.
- Wide Range of Applications: The BD50HC0MEFJ-ME2 is versatile and can be used in various electronic devices, including power supplies, motor control systems, and inverters.
- Reliable Operation: It has excellent thermal properties and is designed to operate reliably even under demanding conditions, ensuring long-term performance.
Application Fields and Examples
The BD50HC0MEFJ-ME2 can be utilized in a wide range of application fields, including:
- Power Supplies: The MOSFET can be employed in power supply circuits to efficiently regulate voltage and current, ensuring stable and reliable power delivery.
- Motor Control Systems: It can be integrated into motor control circuits to effectively manage the flow of electrical power, enabling precise and responsive motor control.
- Inverters: The device can be used in inverter circuits to convert DC power into AC power, allowing for the control and distribution of electrical energy.
Overall, the BD50HC0MEFJ-ME2 MOSFET from Rohm Semiconductor offers high-performance characteristics, efficient power handling capabilities, and versatility, making it a reliable choice for a variety of electronic applications.