The K4EBE304ED-EGCG is part of Samsung's Low Power Double Data Rate 3 (LPDDR3) mobile DRAM series. Recognized for its high performance, speed, and power efficiency, it supports a wide range of mobile solutions including smartphones, IoT devices and wearables.
K4EBE304ED-EGCG Spot stock picture
Key Features:
High Performance and Speed: With speeds up to 2133 Mbps, this memory chip can handle demanding applications with ease.
Power Efficiency: Operating voltages at 1.8V / 1.2V / 1.2V contribute to significant energy savings.
Broad Compatibility: Its versatility makes it suitable for diverse mobile solutions from smartphones to IoT devices and wearables.
Technical Specifications:
Density : 32Gb (Gigabit)
Organization : x32
Speed : Up to 2133Mbps
Voltage : Operates at multiple voltage levels - Primary: 1.8 V; Secondary/IO: both at 1.2 V
Temperature Range : -25 ~ +85 °C
Package Type: FBGA package with total pin count as per specification