Introduction to the SKIIP82ANB15T10 IGBT Module by SEMIKRON
The SKIIP82ANB15T10, produced by SEMIKRON, stands out as an advanced IGBT (Insulated Gate Bipolar Transistor) module, engineered for high power applications that demand efficient power conversion and control. This module combines IGBT choppers and freewheeling diodes to deliver fast switching capabilities, high current endurance, and superior thermal management. It is designed to support a maximum repetitive peak reverse voltage (VRRM) of 1500V for the rectifier and 1200V for both the IGBT chopper and freewheeling diode, making it suitable for handling substantial power levels efficiently. The SKIIP82ANB15T10 is built to maintain its performance and reliability even under high temperature conditions.
Semikron is the manufacturer of the SKIIP82ANB15T10, which is available in stock at Nantian. The reference price for SKIIP82ANB15T10 can be found by referring to Semikron or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the SKIIP82ANB15T10 datasheet PDF and pin diagram description that are available for download.
The SKIIP82ANB15T10 has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.
All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to SKIIP82ANB15T10 could be downloaded from Nantian's platform.
Core Features
IGBT Chopper with a VCES of 1200V and a VGES of ±20V, designed for efficient switching and power control.
Freewheeling Diode with an average forward current (IF) of 38/26A at 25/80°C, demonstrating its capability to efficiently manage significant current levels.
Peak forward current (IFM) of 76/52A, highlighting its ability to withstand high current peaks.
High insulation voltage (Visol) of 2500V, ensuring operational safety under high voltage conditions.
Technical Specifications
The module has an operating junction temperature range (Tj) of -40 to +150°C for diodes and -40 to +125°C for IGBTs, accommodating various environmental conditions.
It features a low forward voltage drop (VF) of 1.15V at 75A for diodes, which minimizes power losses and enhances efficiency.
Dynamic performance indicators such as turn-on delay time (td(on)), rise time (tr), turn-off delay time (td(off)), and fall time (tf) for IGBT choppers are optimized for rapid switching applications.
Thermal resistance junction to heatsink (Rthjh) is minimized for both IGBT and diodes, promoting effective heat dissipation.
Applications and Integration
The SKIIP82ANB15T10 module excels in various high-power applications such as electric drives, renewable energy inverters, and power supply systems where efficient power conversion and control are essential. Its combination of IGBT choppers and freewheeling diodes in a single module simplifies design processes, reduces the overall footprint, and improves system reliability and performance. The module's specifications, including high current handling capacity, fast switching speeds, and efficient thermal management, make it a preferred choice for designers aiming to enhance the performance and efficiency of their power electronic systems.