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Vishay Semiconductor Diodes Division US1G-E3/5AT

Manufacturer Part Number : US1G-E3/5AT
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 400V 1A DO214AC
Lead Free Status / RoHS Status : Lead free / RoHS Compliant
Datasheet : US1G-E3/5AT.PDF US1G-E3/5AT PDF
EDA / CAD Models : US1G-E3/5AT by SnapEDA
Quantity:
287 309 6571541 http://www.vishay.com/docs/88768/us1.pdf Vishay-Semiconductor-Diodes-Division/US1G-E3-5AT 6571541

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Technical Parameters of US1G-E3/5AT

Series:-
Diode Configuration:Standard
Diode Type:400V
FET Type:1A
IGBT Type:1V @ 1A
Structure:Fast Recovery =< 500ns, > 200mA (Io)
Transistor Type:50ns
Triac Type:10米A @ 400V
Type:15pF @ 4V, 1MHz
Voltage:Surface Mount
Voltage - Breakover:-55~C ~ 150~C
Voltage - Off State:DO-214AC, SMA
Voltage - Zener (Nom) (Vz):DO-214AC (SMA)
Applications:

Product Details

We can supply Vishay Semiconductor Diodes Division part# US1G-E3/5AT, use the request quote form to request US1G-E3/5AT pirce and lead time. Nantian Electronics - ntchip.com is an independent stocking distributor of electronic components. With 3+ Million line items of available electronic components can ship in short lead-time, over 300 thousand part numbers of electronic components in stock for immediately delivery, which may include part number US1G-E3/5AT. The price and lead time for US1G-E3/5AT depending on the quantity required, availability and warehouse location. Contact us today and our sales representative will provide you price and delivery on Part# US1G-E3/5AT. We look forward to doing business with you.

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