RF FETs

RF FETs, otherwise known as Radio Frequency Field-Effect Transistors, are a type of discrete semiconductor device that play a pivotal role in several modern electronics. They act as a switch or an amplifier within electronic circuits, regulating electrical behavior. These products, using voltage to control the flow of current, are integral for the function of devices varying from radios and televisions to essential telecommunications equipment. The nature and precision of RF FET's make them specifically apt for high-frequency applications like Wi-Fi, RF power amplifiers in wireless communication devices, radar systems, and satellite communications, where they ensure seamless and stable transmission.

The main characteristics of RF FETs include their high input impedance, which allows for excellent voltage control, and their ability to handle strong signal strength without distortion, thanks to their high power gain. Manufacturers like NXP Semiconductors, Infineon Technologies, and Qorvo are leading the market in RF FET production.

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TRANS LDMOS SOT1112A
RFQ
FET RF 70V 960MHZ QM780-2
RFQ
FET RF 2CH 65V 2.17GHZ 16HSOPF
RFQ
FET RF 65V 945MHZ PWRSO-10
RFQ
TRANS RF 60W LDMOS DFM6F
RFQ
TRANS LDMOS SOT1112A
RFQ
FET RF 70V 920MHZ OM780-2
RFQ
FET RF 2CH 65V 2.17GHZ NI780S-4
RFQ
FET RF 2CH 65V 2.17GHZ NI780-4
RFQ
FET RF 2CH 65V 1.92GHZ HSOP4F
RFQ
RF PWR MOSFET 900V 6.5A TO247
RFQ
RF PWR MOSFET 900V 6.5A TO247
RFQ
FET RF 65V 2.17GHZ NI-780S
RFQ
FET RF 110V 220MHZ TO272-4
RFQ
RF PWR MOSFET 1200V 6A TO-247
RFQ
RF PWR MOSFET 1200V 6A TO-247
RFQ
FET RF 65V 2.14GHZ 16-HTSSOP
RFQ
TRANS LDMOS SOT1112A
RFQ
MOSFET RF PWR N-CH 28V 150W M174
RFQ
FET RF 2CH 65V 2.62GHZ NI780S-4
RFQ
RF PWR MOSFET 1000V TO-247
RFQ
RF PWR MOSFET 1000V TO-247
RFQ
FET RF 65V 2.17GHZ 16HSOP
RFQ
FET RF 65V 945MHZ PWRSO-10
RFQ
FET RF 66V 880MHZ TO-270-4
RFQ
FET RF 66V 880MHZ TO-272-4
RFQ
FET RF 65V 945MHZ PWRSO-10
RFQ
FET RF 65V 2.7GHZ TO-272
RFQ
FET RF 2CH 65V 957.5MHZ 16HSOPF
RFQ
FET RF 2CH 65V 957.5MHZ 16HSOP
RFQ
 
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