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infineon-technologies/fz1200r33he3
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| Product Attribute | Attribute Value |
|---|
| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 3.3 kV |
| Collector-Emitter Saturation Voltage: | 2.7 V |
| Continuous Collector Current at 25 C: | 1.2 kA |
| Gate-Emitter Leakage Current: | 400 nA |
| Pd - Power Dissipation: | 1.8 MW |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tray |
| Brand: | Infineon Technologies |
| Product Type: | IGBT Modules |
Introduction to the FZ1200R33HE3 IGBT Module
The FZ1200R33HE3 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies, a leading provider of power semiconductor solutions. This single-configuration IGBT module is designed for demanding power electronics applications that require efficient and reliable power switching capabilities.
FZ1200R33HE3 Pinout
As a professional Infineon distributor, Nantian Electronic has a large number of FZ1200R33HE3 in stock. We also provide FZ1200R33HE3 parameters, FZ1200R33HE3 Datasheet PDF and pin diagram instructions for download.
Key Specifications
The FZ1200R33HE3 boasts impressive specifications that make it suitable for a wide range of applications. With a maximum collector-emitter voltage (VCEO) of 3.3 kV, this module can handle high-voltage requirements with ease. The collector-emitter saturation voltage is rated at 2.7 V, ensuring efficient power conversion and minimal power losses during operation.
One of the standout features of the FZ1200R33HE3 is its continuous collector current rating of 1.2 kA at 25°C. This high current capability allows the module to handle substantial power loads, making it ideal for power-intensive applications such as renewable energy systems, industrial drives, and traction inverters.
Thermal Characteristics and Power Dissipation
Effective thermal management is crucial for the reliable operation of IGBT modules. The FZ1200R33HE3 has a maximum power dissipation (Pd) of 1.8 MW, indicating its ability to handle significant heat generation. The module is designed to operate within a wide temperature range, with a minimum operating temperature of -40°C and a maximum operating temperature of +150°C. This extended temperature range allows for deployment in diverse environmental conditions.
Gate-Emitter Characteristics
The gate-emitter interface is a critical aspect of IGBT module performance. The FZ1200R33HE3 exhibits a low gate-emitter leakage current of 400 nA, ensuring stable and reliable gate control. This low leakage current helps to minimize unwanted power losses and improves the overall efficiency of the power switching process.
Packaging and Handling
Infineon Technologies packages the FZ1200R33HE3 in a tray format, which provides convenient handling and storage. The tray packaging ensures the modules are protected during transportation and facilitates easy integration into power electronic assemblies. Proper handling precautions should be followed to avoid damage to the module during installation and use.
Physical picture of the bottom of FZ1200R33HE3
Applications
The FZ1200R33HE3 IGBT module finds applications in various power electronics domains, including:
Renewable energy systems, such as solar inverters and wind power converters
Industrial drives and motor control systems
Traction inverters for electric and hybrid vehicles
High-voltage DC transmission systems
Power quality and grid support applications
The module's high voltage and current ratings, combined with its efficient switching characteristics, make it a suitable choice for demanding power conversion tasks in these application areas.