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infineon-technologies/fz1800r16kf4-s1
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Product Attribute | Attribute Value |
---|
Manufacturer: | Infineon |
Product Category: | IGBT Modules |
RoHS: | N |
Product: | IGBT Silicon Modules |
Configuration: | Triple Common Emitter Common Gate |
Collector- Emitter Voltage VCEO Max: | 1.6 kV |
Collector-Emitter Saturation Voltage: | 3.5 V |
Continuous Collector Current at 25 C: | 1.8 kA |
Gate-Emitter Leakage Current: | 600 nA |
Pd - Power Dissipation: | 11 kW |
Package / Case: | IHM190 |
Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 125 C |
Brand: | Infineon Technologies |
Height: | 38 mm |
Length: | 190 mm |
Maximum Gate Emitter Voltage: | 20 V |
Mounting Style: | SMD/SMT |
Product Type: | IGBT Modules |
Introduction to FZ1800R16KF4-S1 IGBT Silicon Module
The FZ1800R16KF4-S1 is a state-of-the-art IGBT Silicon Module, expertly crafted by Infineon. This module belongs to Infineon's extensive lineup of IGBT Modules and is designed for superior performance in various applications. Its unique Triple Common Emitter Common Gate configuration gives it an edge in versatility and efficiency.
Infineon FZ1800R16KF4-S1
Infineon Technologies is the manufacturer of the FZ1800R16KF4-S1, which is available in stock at Nantian. The reference price for FZ1800R16KF4-S1 can be found by referring to Infineon Technologies or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the FZ1800R16KF4-S1 datasheet PDF and pin diagram description that are available for download.
The FZ1800R16KF4-S1 has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.
All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to FZ1800R16KF4-S1 could be downloaded from Nantian's platform.
Key Specifications and Features
This robust IGBT Silicon Module has a maximum Collector-Emitter Voltage (VCEO) of 1.6 kV, making it capable of handling high voltage conditions with ease. It also features a Collector-Emitter Saturation Voltage of 3.5 V and can maintain a Continuous Collector Current at 25 C up to 1.8 kA, reflecting its ability to tolerate heavy current loads without faltering. With its minimal Gate-Emitter Leakage Current standing at only 600 nA, the module ensures limited energy wastage during operations while providing an impressive power dissipation capacity of up to 11 kW.
Operating Conditions and Dimensions
The operating temperature range for the FZ1800R16KF4-S1 spans from -40 C up to +125 C, allowing optimal performance under varying environmental circumstances without compromising on reliability or efficiency. The compact design measures just 190 mm in length and stands at a height of only 38 mm, facilitating seamless integration into diverse systems.
Mounting Style and Packaging
The mounting style adopted by this model is SMD/SMT (Surface Mount Device/ Surface Mount Technology), which offers secure installation with minimized space requirements—a crucial feature for modern electronics design needs. Encased within an IHM190 package type, the product guarantees protection throughout handling processes as well as transportation phases.
Brand Identity & Product Type
A product under the esteemed banner of Infineon Technologies—one globally recognized brand that excels in delivering semiconductor solutions—the FZ1800R16KF4-S1 falls within their category of reliable IGBT Modules known for their exceptional efficiency across numerous applications.
Maximum Gate Emitter Voltage Capacity
In terms of gate emitter voltage capacity—an important factor determining how well any module can handle high voltage levels—the FZ1800R16KF4-S1 exhibits resilience against voltages reaching up till about20 V maximum limit; thus emphasizing once again its robustness even when faced with demanding operational environments.