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ON Semiconductor NGB8207BNT4G

Manufacturer Part Number : NGB8207BNT4G
Manufacturer : ON Semiconductor
Description : IGBT 365V 20A 165W D2PAK3
Lead Free Status / RoHS Status : Lead free / RoHS Compliant
Datasheet : NGB8207BNT4G.PDF NGB8207BNT4G PDF
EDA / CAD Models : NGB8207BNT4G by SnapEDA
Quantity:
287 298 6541115 /datasheets/Discrete Semiconductor Products/NGB8207BNT4G-6541115.pdf ON/NGB8207BNT4G 6541115
Series:-
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):365V
Current - Collector (Ic) (Max):20A
Current - Collector Pulsed (Icm):50A
Vce(on) (Max) @ Vge, Ic:2.6V @ 4V, 20A
Power - Max:165W
Switching Energy:-
Input Type:Logic
Gate Charge:-
Td (on/off) @ 25~C:-
Test Condition:-
Reverse Recovery Time (trr):-
Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type:Surface Mount
Supplier Device Package:D2PAK

The NGB8207BNT4G from ON Semiconductor is a versatile semiconductor device, ideal for coil-on-plug and driver-on-coil applications, most notably in ignition systems. This component features gate-emitter ESD protection and integrated ESD diode protection, elements designed to ensure the durability and reliability of the device in a multitude of environments. Its temperature-compensated gate-collector voltage clamp limits significantly factor into preventing excess stress being applied to the load.

ON Semiconductor NGB8207BNT4G original part picture

Significant among its features is a low threshold voltage, enabling easy interfacing with power loads, particularly to logic or microprocessor devices. The NGB8207BNT4G is marked by a low saturation voltage and a high pulsed current capability, optimizing its efficiency in high-demand operations. Its ability to handle a minimum avalanche energy of 500 mJ is noteworthy and it comes with a gate resistor of 70. Importantly, for eco-conscious stakeholders, this device is lead-free (Pb-Free). 

ON Semiconductor NGB8207BNT4G Original Reel Picture

ON Semiconductor NGB8207BNT4G Original Reel Picture

Notably, Nantian Electronics, as a trusted ON Semiconductor distributor, keeps a significant stock of the NGB8207BNT4G, providing detailed specifications, datasheets, and pin diagram instructions for customers.

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Technical Parameters of NGB8207BNT4G

Series:-
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):365V
Current - Collector (Ic) (Max):20A
Current - Collector Pulsed (Icm):50A
Vce(on) (Max) @ Vge, Ic:2.6V @ 4V, 20A
Power - Max:165W
Switching Energy:-
Input Type:Logic
Gate Charge:-
Td (on/off) @ 25~C:-
Test Condition:-
Reverse Recovery Time (trr):-
Package / Case:TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting Type:Surface Mount
Supplier Device Package:D2PAK

Product Details

The NGB8207BNT4G from ON Semiconductor is a versatile semiconductor device, ideal for coil-on-plug and driver-on-coil applications, most notably in ignition systems. This component features gate-emitter ESD protection and integrated ESD diode protection, elements designed to ensure the durability and reliability of the device in a multitude of environments. Its temperature-compensated gate-collector voltage clamp limits significantly factor into preventing excess stress being applied to the load.

ON Semiconductor NGB8207BNT4G original part picture

Significant among its features is a low threshold voltage, enabling easy interfacing with power loads, particularly to logic or microprocessor devices. The NGB8207BNT4G is marked by a low saturation voltage and a high pulsed current capability, optimizing its efficiency in high-demand operations. Its ability to handle a minimum avalanche energy of 500 mJ is noteworthy and it comes with a gate resistor of 70. Importantly, for eco-conscious stakeholders, this device is lead-free (Pb-Free). 

ON Semiconductor NGB8207BNT4G Original Reel Picture

ON Semiconductor NGB8207BNT4G Original Reel Picture

Notably, Nantian Electronics, as a trusted ON Semiconductor distributor, keeps a significant stock of the NGB8207BNT4G, providing detailed specifications, datasheets, and pin diagram instructions for customers.

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