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infineon-technologies/fz3600r17he4
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| Product Attribute | Attribute Value |
|---|
| Manufacturer: | Infineon |
| Product Category: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 1.7 kV |
| Collector-Emitter Saturation Voltage: | 1.95 V |
| Continuous Collector Current at 25 C: | 3.6 kA |
| Gate-Emitter Leakage Current: | 400 nA |
| Pd - Power Dissipation: | 20 kW |
| Minimum Operating Temperature: | - 40 C |
| Maximum Operating Temperature: | + 150 C |
| Packaging: | Tray |
| Brand: | Infineon Technologies |
| Product Type: | IGBT Modules |
Overview of the FZ3600R17HE4 IGBT Module
The FZ3600R17HE4 is a high-performance IGBT (Insulated Gate Bipolar Transistor) module from Infineon Technologies, a leading manufacturer of power semiconductor devices. This module is designed for power electronics applications that require efficient and reliable switching of high currents and voltages. The FZ3600R17HE4 features a single configuration, making it suitable for use in various power conversion systems, such as motor drives, uninterruptible power supplies (UPS), and renewable energy inverters.
As a professional Infineon Technologies distributor, Nantian Electronic has a large number of FZ3600R17HE4 in stock. We also provide FZ3600R17HE4 parameters, FZ3600R17HE4 Datasheet PDF and pin diagram instructions for download.
Key Specifications and Ratings
The FZ3600R17HE4 offers impressive specifications that highlight its high-performance capabilities. With a maximum collector-emitter voltage (VCEO) of 1.7 kV, this module can handle high voltage applications. The collector-emitter saturation voltage is rated at 1.95 V, ensuring low power losses during conduction. The module can handle a continuous collector current of 3.6 kA at 25°C, making it suitable for high-current applications. The gate-emitter leakage current is limited to 400 nA, ensuring stable and reliable operation. The module has a power dissipation (Pd) rating of 20 kW, allowing for efficient heat management in power electronics systems.
Operating Conditions and Protection Features
Wide Temperature Range: The FZ3600R17HE4 has an extended operating temperature range from -40°C to +150°C, making it suitable for use in various environmental conditions and applications with high ambient temperatures.
Gate-Emitter Protection: The module has a low gate-emitter leakage current of 400 nA, protecting the device from unwanted triggering and ensuring reliable operation.
RoHS Compliance: The FZ3600R17HE4 is RoHS compliant, which means it adheres to the guidelines set by the European Union's Restriction of Hazardous Substances (RoHS) directive, ensuring that the module is free from hazardous substances.
Packaging and Handling
The FZ3600R17HE4 is available in tray packaging, which is suitable for automated assembly processes and provides protection during transportation and storage. Proper handling and storage procedures should be followed to ensure the module's integrity and performance.
FZ3600R17HE4 Pinout
Applications and Benefits
The FZ3600R17HE4 IGBT module is suitable for a wide range of power electronics applications, including:
Motor drives
Uninterruptible power supplies (UPS)
Renewable energy inverters
High-voltage switching systems
The module's high-performance specifications, robust packaging, and wide operating temperature range make it an ideal choice for designers and engineers looking to build efficient, reliable, and compact power electronics systems. By using the FZ3600R17HE4, designers can benefit from reduced system size, improved thermal management, and increased overall system efficiency.