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infineon-technologies/irfp4468pbf
6583768
| Series: | HEXFET? |
| Diode Configuration: | MOSFET N-Channel, Metal Oxide |
| Diode Type: | Standard |
| FET Type: | 100V |
| IGBT Type: | 195A (Tc) |
| Structure: | 2.6 mOhm @ 180A, 10V |
| Transistor Type: | 4V @ 250米A |
| Triac Type: | 540nC @ 10V |
| Type: | 19860pF @ 50V |
| Voltage: | 520W |
| Voltage - Breakover: | -55～C ~ 175～C (TJ) |
| Voltage - Off State: | Through Hole |
| Voltage - Zener (Nom) (Vz): | TO-247-3 |
Introduction to IRFP4468PBF
The IRFP4468PBF is a state-of-the-art power MOSFET transistor designed and manufactured by Infineon Technologies, a leader in semiconductor solutions. This component is specifically engineered to handle high-power applications and efficiency critical operations. Its construction and design cater to the needs of modern electronic circuits, offering robust performance in a variety of conditions.
Key Features
The IRFP4468PBF boasts several features that make it an optimal choice for power management and conversion applications. It operates with a maximum drain-source voltage of 100V, which allows it to handle substantial voltage levels efficiently. The device is capable of supporting a continuous drain current of up to 195A, making it highly suitable for high-current applications. Additionally, its low on-resistance, typically 0.0045 ohms, ensures minimal power loss and heat generation, enhancing overall system reliability.
Applications
This MOSFET finds its use in a wide range of applications due to its high efficiency and reliability. It is commonly used in:
Switch Mode Power Supplies (SMPS)
DC-DC converters
Motor drives
High-power lighting systems
Automotive applications, including electric vehicle (EV) drivetrains
Advantages
The IRFP4468PBF stands out for its exceptional performance in high-power and high-efficiency applications. Its robust design ensures long-term reliability under various operating conditions, including high temperature and high current. The low on-state resistance significantly reduces power losses, which is crucial for energy-sensitive applications. Furthermore, its ability to handle high pulse currents makes it an excellent choice for applications requiring high power density.
Technical Specifications
Understanding the technical specifications of the IRFP4468PBF is vital for integrating it into electronic systems. The key specifications include:
Drain-source voltage (VDS): 100V
Continuous drain current (ID): 195A
Pulse drain current (IDM): 780A
Power dissipation (PD): 520W
Operating temperature range: -55°C to +175°C
On-resistance (RDS(on)): 0.0045Ω
Conclusion
The IRFP4468PBF from Infineon Technologies exemplifies the cutting-edge in power MOSFET technology, offering high efficiency, reliability, and performance for demanding applications. Its extensive use across various industries underscores its adaptability and capability in enhancing power management solutions. Whether for industrial, automotive, or consumer electronics, the IRFP4468PBF provides a solid foundation for high-power, high-efficiency applications.
Infineon Technologies is the manufacturer of the IRFP4468PBF, which is available in stock at Nantian. The reference price for IRFP4468PBF can be found by referring to infineon tech or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the IRFP4468PBF datasheet PDF and pin diagram description that are available for download.
Original IRFP4468PBF in stock
The IRFP4468PBF has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.
All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to IRFP4468PBF could be downloaded from Nantian's platform.