Overview of 1EDI20N12AF by Infineon Technologies
The 1EDI20N12AF is a sophisticated gate driver IC developed by Infineon Technologies, specifically designed to optimize the performance and reliability of power electronics systems. This component is part of the EiceDRIVER™ series, known for its capability to drive both insulated-gate bipolar transistors (IGBTs) and MOSFETs, making it highly versatile for various high-power switching applications.
Infineon 1EDI20N12AF Label
As a professional Infineon distributor, Nantian Electronic has a large number of 1EDI20N12AF in stock. We also provide 1EDI20N12AF parameters, 1EDI20N12AF Datasheet PDF and pin diagram instructions for download.
Key Features
Single channel isolated gate driver
For 600 V/650 V/1200 V IGBTs, MOSFETs and SiC MOSFETs
Up to 10 A typical peak current at rail-to-rail outputs
Separate source and sink outputs
• Galvanically isolated coreless transformer driver
Wide input voltage operating range
Suitable for operation at high ambient temperature and in fast switching applications
Small and cost optimized DSO-8 150 mil package with 4 mm creepage
40 V absolute maximum output supply voltage
Applications
AC and brushless DC motor drives
High voltage DC/DC-converter and DC/AC-inverter
Induction heating resonant application
UPS-systems
Commercial air-conditioning (CAC)
Server and telecom switched mode power supplies (SMPS)
Solar
Package outline
1EDI20N12AF Package Outline