IRF7410TRPBF-9803572.jpg
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| TYPE | DESCRIPTION |
|---|
| Mfr | Infineon Technologies |
| Series | HEXFET® |
| Packaging | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® |
| Part Status | Active |
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 12 V |
| Current - Continuous Drain (Id) @ 25°C | 16A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4.5V |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 16A, 4.5V |
| Vgs(th) (Max) @ Id | 900mV @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 4.5 V |
| Vgs (Max) | ±8V |
| Input Capacitance (Ciss) (Max) @ Vds | 8676 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
Introduction to the IRF7410TRPBF from IR (Infineon Technologies)
The IRF7410TRPBF is a high-performance P-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) manufactured by IR (Infineon Technologies). This transistor is designed for use in a wide range of applications, including power management, switching, and motor control. With its robust features and reliable performance, the IRF7410TRPBF is an excellent choice for engineers and designers seeking a high-quality, efficient, and compact transistor solution.
Original IRF7410TRPBF in stock
As a professional IR distributor, Nantian Electronic has a large number of IRF7410TRPBF in stock. We also provide IRF7410TRPBF parameters, IRF7410TRPBF Datasheet PDF and pin diagram instructions for download.
Key Features and Specifications
P-Channel MOSFET technology based on silicon (Si)
Surface-mount device (SMD/SMT) packaging in a compact SOIC-8 case
Single-channel configuration for simple and efficient design integration
High drain-source breakdown voltage (Vds) of 12V for reliable operation in various applications
Continuous drain current (Id) of 16A, enabling high current handling capability
Low drain-source resistance (Rds On) of 7 mOhms for minimal power loss and efficient operation
Wide gate-source voltage (Vgs) range from -8V to +8V, providing flexibility in gate drive design
Gate-source threshold voltage (Vgs th) of 1V for precise control and switching
Gate charge (Qg) of 91nC for fast switching and low power consumption
Wide operating temperature range from -55°C to +150°C, suitable for various environmental conditions
Power dissipation (Pd) of 2.5W, ensuring efficient heat management and reliability
Enhancement channel mode for simple and efficient gate control
Packaging and Dimensions
The IRF7410TRPBF is available in various packaging options to suit different manufacturing and assembly requirements. These include reel, cut tape, and MouseReel packaging. The compact SOIC-8 package measures 4.9mm in length and 1.75mm in height, making it suitable for space-constrained designs and high-density board layouts.
IRF7410TRPBF Reel Packing
Applications and Benefits
The IRF7410TRPBF finds extensive use in a wide range of applications, including:
Power management systems
Switching power supplies
Motor control and driver circuits
Battery protection and management
Load switching and power distribution
The transistor's high drain-source breakdown voltage and continuous drain current rating ensure reliable operation in demanding environments. The low drain-source resistance minimizes power loss, enhancing overall system efficiency. The wide gate-source voltage range and precise gate-source threshold voltage provide designers with flexibility in gate drive design and enable accurate control over the transistor's switching behavior.
Reliability and Performance
IR (Infineon Technologies) is known for producing high-quality and reliable semiconductor products. The IRF7410TRPBF undergoes rigorous testing and quality control measures to ensure consistent performance and long-term reliability. The transistor's wide operating temperature range, from -55°C to +150°C, makes it suitable for use in various environmental conditions, from industrial to automotive applications.
The IRF7410TRPBF's power dissipation rating of 2.5W ensures efficient heat management and helps maintain the transistor's performance and reliability over its lifetime. The enhancement channel mode simplifies gate control and enables efficient switching, contributing to overall system performance and power efficiency.