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Rohm Semiconductor BD50GA3MEFJ-ME2

Manufacturer Part Number : BD50GA3MEFJ-ME2
Manufacturer : Rohm Semiconductor
Description : AUTOMOTIVE 300MA VARIABLE OUTPUT
Lead Free Status / RoHS Status : Lead free / RoHS Compliant
Datasheet : BD50GA3MEFJ-ME2.PDF BD50GA3MEFJ-ME2 PDF
EDA / CAD Models : BD50GA3MEFJ-ME2 by SnapEDA
Quantity:
1 152 7625887 http://rohmfs.rohm.com/en/products/databook/datasheet/ic/power/linear_regulator/bdxxga3mefj-m-e.pdf Rohm-Semiconductor/BD50GA3MEFJ-ME2 7625887
Output Configuration:Positive
Output Type:Fixed
Voltage - Input (Max):14V
Voltage - Output (Min/Fixed):5V
Voltage - Output (Max):-
Voltage Dropout (Max):0.9V @ 300mA
Current - Output:1.5A
PSRR:-
Control Features:Enable
Protection Features:Over Current, Over Temperature, Soft Start
Operating Temperature:-40~C ~ 105~C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package:8-HTSOP-J

Overview

The BD50GA3MEFJ-ME2 is a power transistor module manufactured by Rohm Semiconductor. It is designed to provide efficient and reliable power management for a wide range of applications. With its compact size and high performance, this module offers a versatile solution for various power control needs.

Product Technical Characteristics

  • Transistor Type: The BD50GA3MEFJ-ME2 is a power transistor module that consists of multiple transistor elements. It uses advanced semiconductor technology to deliver high power handling capability.
  • Voltage and Current Ratings: This module has a maximum collector-emitter voltage of 600V and a maximum collector current of 50A. These ratings make it suitable for applications that require high voltage and current levels.
  • Integrated Circuitry: The BD50GA3MEFJ-ME2 incorporates various protective features, such as overcurrent protection and thermal shutdown, to ensure safe operation under different operating conditions.
  • Package Type: It is packaged in a compact and robust module that facilitates easy installation and reliable performance. The package design ensures efficient heat dissipation, enabling the module to operate at high power without overheating.

Features and Advantages

  • High Power Handling: With a maximum collector current of 50A, this module can handle demanding power requirements in a wide range of applications.
  • Efficient Heat Dissipation: The compact package design incorporates effective heat dissipation mechanisms, allowing the module to operate at high power levels without the risk of overheating.
  • Integrated Protection: The BD50GA3MEFJ-ME2 is equipped with built-in protection features, such as overcurrent protection and thermal shutdown, to ensure safe operation and prevent damage to the module.
  • Reliable Performance: Manufactured by Rohm Semiconductor, a trusted name in the semiconductor industry, this module offers reliable and consistent performance.

Application Fields and Examples

The BD50GA3MEFJ-ME2 is suitable for a wide range of applications in various industries. Some of the typical application fields include:

  • Industrial Automation: This module can be used in motor control systems, power supplies, and other industrial automation equipment that require high power handling capability.
  • Renewable Energy: In solar power inverters and wind turbine systems, the BD50GA3MEFJ-ME2 can play a crucial role in efficient power conversion and control.
  • Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV): With its ability to handle high power levels, this module can be used in EV/HEV powertrain systems, battery management systems, and charging infrastructure.
  • Consumer Electronics: The compact size and high efficiency of the BD50GA3MEFJ-ME2 make it suitable for various consumer electronics applications, including high-power audio amplifiers and voltage regulator circuits.

Overall, the BD50GA3MEFJ-ME2 power transistor module from Rohm Semiconductor provides a reliable and efficient solution for power management in a wide range of applications. Its high power handling capabilities, integrated protection features, and compact package design make it an ideal choice for demanding power control needs across different industries.

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Technical Parameters of BD50GA3MEFJ-ME2

Output Configuration:Positive
Output Type:Fixed
Voltage - Input (Max):14V
Voltage - Output (Min/Fixed):5V
Voltage - Output (Max):-
Voltage Dropout (Max):0.9V @ 300mA
Current - Output:1.5A
PSRR:-
Control Features:Enable
Protection Features:Over Current, Over Temperature, Soft Start
Operating Temperature:-40~C ~ 105~C (TA)
Mounting Type:Surface Mount
Package / Case:8-SOIC (0.154", 3.90mm Width) Exposed Pad
Supplier Device Package:8-HTSOP-J

Product Details

Overview

The BD50GA3MEFJ-ME2 is a power transistor module manufactured by Rohm Semiconductor. It is designed to provide efficient and reliable power management for a wide range of applications. With its compact size and high performance, this module offers a versatile solution for various power control needs.

Product Technical Characteristics

  • Transistor Type: The BD50GA3MEFJ-ME2 is a power transistor module that consists of multiple transistor elements. It uses advanced semiconductor technology to deliver high power handling capability.
  • Voltage and Current Ratings: This module has a maximum collector-emitter voltage of 600V and a maximum collector current of 50A. These ratings make it suitable for applications that require high voltage and current levels.
  • Integrated Circuitry: The BD50GA3MEFJ-ME2 incorporates various protective features, such as overcurrent protection and thermal shutdown, to ensure safe operation under different operating conditions.
  • Package Type: It is packaged in a compact and robust module that facilitates easy installation and reliable performance. The package design ensures efficient heat dissipation, enabling the module to operate at high power without overheating.

Features and Advantages

  • High Power Handling: With a maximum collector current of 50A, this module can handle demanding power requirements in a wide range of applications.
  • Efficient Heat Dissipation: The compact package design incorporates effective heat dissipation mechanisms, allowing the module to operate at high power levels without the risk of overheating.
  • Integrated Protection: The BD50GA3MEFJ-ME2 is equipped with built-in protection features, such as overcurrent protection and thermal shutdown, to ensure safe operation and prevent damage to the module.
  • Reliable Performance: Manufactured by Rohm Semiconductor, a trusted name in the semiconductor industry, this module offers reliable and consistent performance.

Application Fields and Examples

The BD50GA3MEFJ-ME2 is suitable for a wide range of applications in various industries. Some of the typical application fields include:

  • Industrial Automation: This module can be used in motor control systems, power supplies, and other industrial automation equipment that require high power handling capability.
  • Renewable Energy: In solar power inverters and wind turbine systems, the BD50GA3MEFJ-ME2 can play a crucial role in efficient power conversion and control.
  • Electric Vehicle (EV) and Hybrid Electric Vehicle (HEV): With its ability to handle high power levels, this module can be used in EV/HEV powertrain systems, battery management systems, and charging infrastructure.
  • Consumer Electronics: The compact size and high efficiency of the BD50GA3MEFJ-ME2 make it suitable for various consumer electronics applications, including high-power audio amplifiers and voltage regulator circuits.

Overall, the BD50GA3MEFJ-ME2 power transistor module from Rohm Semiconductor provides a reliable and efficient solution for power management in a wide range of applications. Its high power handling capabilities, integrated protection features, and compact package design make it an ideal choice for demanding power control needs across different industries.

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