M30H100CTHE3-A-P-5911132.jpg M30H100CTHE3-A-P-5911132.jpg
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Electro-Films (EFI) / Vishay M30H100CTHE3_A/P

Manufacturer Part Number : M30H100CTHE3_A/P
Manufacturer : Electro-Films (EFI) / Vishay
Description : DIODE ARRAY SCHOTTKY 100V TO220
Lead Free Status / RoHS Status : Lead free / RoHS Compliant
Datasheet : M30H100CTHE3_A/P.PDF M30H100CTHE3_A/P PDF
Download Datasheet : M30H100CTHE3_A/P Details.PDF M30H100CTHE3_A/P PDF
EDA / CAD Models : M30H100CTHE3_A/P by SnapEDA
Quantity:
1780 1796 3624043 /datasheets//Electro-Films-EFI-Vishay-M30H100CTHE3-A-P-5911132.pdf electro-films-efi-vishay/m30h100cthe3-a-p 3624043
TYPEDESCRIPTION
PackagingTube
Part StatusObsolete
Diode Configuration1 Pair Common Cathode
TechnologySchottky
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io) (per Diode)15A
Voltage - Forward (Vf) (Max) @ If930 mV @ 30 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr5 µA @ 100 V
Operating Temperature - Junction-65°C ~ 175°C
GradeAutomotive


Introduction to M30H100CTHE3_A/P

The M30H100CTHE3_A/P, developed by Vishay, is a Schottky diode known for its high efficiency and fast recovery speed. Despite being categorized as obsolete, this component has historically played a crucial role in various power management applications. Its design focuses on minimizing voltage drop and energy loss while providing rapid switching capabilities. Such features make it highly suitable for high-frequency and high-efficiency applications, where minimizing thermal and conduction losses is critical.

M30H100CTHE3_AP

Vishay M30H100CTHE3_A/P

As a professional Vishay distributor, Nantian Electronic has a large number of M30H100CTHE3_A/P in stock. We also provide M30H100CTHE3_A/P parameters, M30H100CTHE3_A/P Datasheet PDF and pin diagram instructions for download.

Key Features

This diode is distinguished by its dual common cathode configuration, allowing for the simplification of designs in applications requiring synchronous rectification. It boasts a maximum DC reverse voltage of 100 V and an average rectified current capability of 15A per diode, making it robust for handling significant power levels. The voltage forward (Vf) maxes out at 930 mV at a current of 30 A, indicating its efficiency in conducting forward current. Its fast recovery speed, less than 500 ns for currents over 200 mA, and a low reverse leakage current of 5 µA at 100 V, underscore its suitability for applications demanding quick transitions and low standby power loss.

Electrical and Physical Parameters

  • Technology: Schottky, known for its low forward voltage drop and fast switching characteristics.

  • Diode Configuration: 1 Pair Common Cathode, optimizing the component for use in applications where a compact and efficient rectification method is needed.

  • Operating Temperature Range: Capable of functioning in extreme conditions, from -65°C to 175°C, making it reliable for use in automotive and industrial environments where temperature swings can be drastic.

Performance Characteristics

The device's performance is characterized by its ability to handle high currents and voltages with minimal losses, a critical aspect in power conversion and management applications. Its fast recovery time enhances efficiency in switching applications, reducing energy wastage and improving overall system performance. The low reverse leakage current ensures minimal power loss when the diode is in the off state, an essential feature for power-sensitive applications.

M30H100CTHE3_AP package

Original M30H100CTHE3_AP in Stock

Applications and Compatibility

Despite its obsolescence, the M30H100CTHE3_A/P has been widely utilized in a range of applications, including automotive systems, power supply units, and high-frequency inverters. Its robustness and efficiency have made it a preferred choice for systems requiring reliable, high-performance diodes. The Schottky technology and common cathode configuration offer a compact, efficient solution for designers working on power conversion and management systems.

Conclusion

The M30H100CTHE3_A/P from Vishay stands as a testament to the enduring relevance of Schottky diodes in power electronics. Its ability to combine high-current and voltage capabilities with fast switching speeds and low losses has established it as a valuable component in a variety of power management applications. Although marked as obsolete, its legacy continues to influence the design and selection of diodes in modern electronic systems.

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Technical Parameters of M30H100CTHE3_A/P

TYPEDESCRIPTION
PackagingTube
Part StatusObsolete
Diode Configuration1 Pair Common Cathode
TechnologySchottky
Voltage - DC Reverse (Vr) (Max)100 V
Current - Average Rectified (Io) (per Diode)15A
Voltage - Forward (Vf) (Max) @ If930 mV @ 30 A
SpeedFast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr5 µA @ 100 V
Operating Temperature - Junction-65°C ~ 175°C
GradeAutomotive


Product Details

Introduction to M30H100CTHE3_A/P

The M30H100CTHE3_A/P, developed by Vishay, is a Schottky diode known for its high efficiency and fast recovery speed. Despite being categorized as obsolete, this component has historically played a crucial role in various power management applications. Its design focuses on minimizing voltage drop and energy loss while providing rapid switching capabilities. Such features make it highly suitable for high-frequency and high-efficiency applications, where minimizing thermal and conduction losses is critical.

M30H100CTHE3_AP

Vishay M30H100CTHE3_A/P

As a professional Vishay distributor, Nantian Electronic has a large number of M30H100CTHE3_A/P in stock. We also provide M30H100CTHE3_A/P parameters, M30H100CTHE3_A/P Datasheet PDF and pin diagram instructions for download.

Key Features

This diode is distinguished by its dual common cathode configuration, allowing for the simplification of designs in applications requiring synchronous rectification. It boasts a maximum DC reverse voltage of 100 V and an average rectified current capability of 15A per diode, making it robust for handling significant power levels. The voltage forward (Vf) maxes out at 930 mV at a current of 30 A, indicating its efficiency in conducting forward current. Its fast recovery speed, less than 500 ns for currents over 200 mA, and a low reverse leakage current of 5 µA at 100 V, underscore its suitability for applications demanding quick transitions and low standby power loss.

Electrical and Physical Parameters

  • Technology: Schottky, known for its low forward voltage drop and fast switching characteristics.

  • Diode Configuration: 1 Pair Common Cathode, optimizing the component for use in applications where a compact and efficient rectification method is needed.

  • Operating Temperature Range: Capable of functioning in extreme conditions, from -65°C to 175°C, making it reliable for use in automotive and industrial environments where temperature swings can be drastic.

Performance Characteristics

The device's performance is characterized by its ability to handle high currents and voltages with minimal losses, a critical aspect in power conversion and management applications. Its fast recovery time enhances efficiency in switching applications, reducing energy wastage and improving overall system performance. The low reverse leakage current ensures minimal power loss when the diode is in the off state, an essential feature for power-sensitive applications.

M30H100CTHE3_AP package

Original M30H100CTHE3_AP in Stock

Applications and Compatibility

Despite its obsolescence, the M30H100CTHE3_A/P has been widely utilized in a range of applications, including automotive systems, power supply units, and high-frequency inverters. Its robustness and efficiency have made it a preferred choice for systems requiring reliable, high-performance diodes. The Schottky technology and common cathode configuration offer a compact, efficient solution for designers working on power conversion and management systems.

Conclusion

The M30H100CTHE3_A/P from Vishay stands as a testament to the enduring relevance of Schottky diodes in power electronics. Its ability to combine high-current and voltage capabilities with fast switching speeds and low losses has established it as a valuable component in a variety of power management applications. Although marked as obsolete, its legacy continues to influence the design and selection of diodes in modern electronic systems.

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