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infineon-technologies/fz750r65ke3-p2-s2
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| Product Attribute | Attribute Value |
|---|
| Product: | IGBT Silicon Modules |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 6.5 kV |
| Collector-Emitter Saturation Voltage: | 3 V |
| Continuous Collector Current at 25 C: | 750 A |
| Gate-Emitter Leakage Current: | 400 nA |
| Pd - Power Dissipation: | 3 MW |
| Package / Case: | Module |
| Minimum Operating Temperature: | - 50 C |
| Maximum Operating Temperature: | + 125 C |
| Packaging: | Tray |
| Brand: | Infineon Technologies |
| Maximum Gate Emitter Voltage: | 20 V |
| Mounting Style: | Chassis Mount |
| Product Type: | IGBT Modules |
| Series: | IGBT3 - E3 |
| Factory Pack Quantity: | 1 |
| Subcategory: | IGBTs |
| Technology: | Si |
Introduction to the FZ750R65KE3_P2_S2
The FZ750R65KE3_P2_S2 is a high-voltage, high-power IGBT (Insulated Gate Bipolar Transistor) module manufactured by Infineon Technologies. This component is tailored for managing substantial electrical power in applications such as high-voltage direct current (HVDC) systems, grid power transmission, and large industrial drives. Its design and specifications ensure efficient and reliable operation in high-stress environments.
Original FZ750R65KE3-P2-S2 in Stock
Infineon Technologies is the manufacturer of the FZ750R65KE3, which is available in stock at Nantian. The reference price for FZ750R65KE3 can be found by referring to Infineon Technologies or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the FZ750R65KE3 datasheet PDF and pin diagram description that are available for download.
The FZ750R65KE3 has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.
All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to FZ750R65KE3 could be downloaded from Nantian's platform.
Key Specifications
This IGBT module has a maximum collector-emitter voltage of 6.5kV, allowing it to handle high voltage applications efficiently. It supports a continuous collector current of 750A, suitable for substantial power transmission tasks. The collector-emitter saturation voltage is limited to 3V, which helps to minimize energy losses during operation. Additionally, the module can dissipate up to 3MW of power, indicative of its robust performance in demanding conditions.
Technology and Design
The FZ750R65KE3_P2_S2 incorporates Infineon's advanced IGBT3 - E3 series technology, which enhances its electrical performance by reducing conduction and switching losses. The design focuses on delivering maximum efficiency and reliability in large-scale power management tasks. With its chassis mount packaging, the module is designed for secure and straightforward integration into industrial systems.
Thermal Management and Durability
Thermal efficiency is critical for the longevity of power modules, and the FZ750R65KE3_P2_S2 excels in this area. It operates effectively across a wide temperature range, from -50°C to +125°C, which is crucial for maintaining performance and reliability under varying environmental conditions. The module's high power dissipation capacity ensures that it can handle intense operational demands without compromising its lifespan or efficiency.
Safety and Reliability
Infineon Technologies prioritizes safety and reliability in its products. The FZ750R65KE3_P2_S2 meets stringent international standards, ensuring dependable operation in critical power management applications. Its robust design and high-quality manufacturing process guarantee a reliable power solution for complex and high-voltage systems.
Applications
The FZ750R65KE3_P2_S2 is suitable for a variety of high-power applications. Its high voltage and current handling capabilities make it ideal for use in HVDC systems, industrial motor drives, power generation and transmission, and other applications requiring efficient, high-voltage power management. The module's reliability and efficiency make it a preferred choice for engineers and professionals in the power electronics field.
