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IPS65R1K4C6AKMA1-6581004.jpg IPS65R1K4C6AKMA1-6581004.jpg
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Infineon Technologies IPS65R1K4C6AKMA1

Manufacturer Part Number : IPS65R1K4C6AKMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V 3.2A TO-251
Lead Free Status / RoHS Status : Lead free / RoHS Compliant
Datasheet : IPS65R1K4C6AKMA1.PDF IPS65R1K4C6AKMA1 PDF
EDA / CAD Models : IPS65R1K4C6AKMA1 by SnapEDA
Quantity:
287 309 6581004 /datasheets/Discrete Semiconductor Products/IPS65R1K4C6AKMA1-6581004.pdf Infineon-Technologies/IPS65R1K4C6AKMA1 6581004
Series:CoolMOS?
Diode Configuration:MOSFET N-Channel, Metal Oxide
Diode Type:Standard
FET Type:650V
IGBT Type:3.2A (Tc)
Structure:1.4 Ohm @ 1A, 10V
Transistor Type:3.5V @ 100米A
Triac Type:10.5nC @ 10V
Type:225pF @ 100V
Voltage:-
Voltage - Breakover:-55~C ~ 150~C (TJ)
Voltage - Off State:Through Hole
Voltage - Zener (Nom) (Vz):TO-251-3 Stub Leads, IPak

Meet the IPS65R1K4C6, a top-tier MOSFET product from the pioneers at Infineon Technologies. This product is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), a technology intrinsic for power conversion and management, well-regarded for its ability to switch electricity on and off with exceptional speed and efficiency.

IPS65R1K4C6  Drawing Dimension

Infineon IPS65R1K4C6 drawing dimension

Equipped with CoolMos C6 650V technology, the IPS65R1K4C6 sets a new bar for both performance and reliability. It's specialized for applications that require 650V rating, thereby offering solutions to a broad range of high voltage needs. The CoolMos C6 Power Transistor bestows just not on-paper performance but also field-proven reliability in many high voltage applications.

As a trusted Infineon Technologies distributor, Nantian Electronics maintains a robust inventory of the IPS65R1K4C6. To fully cater to your needs, we also provide a comprehensive set of IPS65R1K4C6 parameters, a detailed IPS65R1K4C6 Datasheet PDF and pin diagram instructions, all available for download to ensure you have all the information you need.

Infineon IPS65R1K4C6 part in tube

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Technical Parameters of IPS65R1K4C6AKMA1

Series:CoolMOS?
Diode Configuration:MOSFET N-Channel, Metal Oxide
Diode Type:Standard
FET Type:650V
IGBT Type:3.2A (Tc)
Structure:1.4 Ohm @ 1A, 10V
Transistor Type:3.5V @ 100米A
Triac Type:10.5nC @ 10V
Type:225pF @ 100V
Voltage:-
Voltage - Breakover:-55~C ~ 150~C (TJ)
Voltage - Off State:Through Hole
Voltage - Zener (Nom) (Vz):TO-251-3 Stub Leads, IPak

Product Details

Meet the IPS65R1K4C6, a top-tier MOSFET product from the pioneers at Infineon Technologies. This product is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), a technology intrinsic for power conversion and management, well-regarded for its ability to switch electricity on and off with exceptional speed and efficiency.

IPS65R1K4C6  Drawing Dimension

Infineon IPS65R1K4C6 drawing dimension

Equipped with CoolMos C6 650V technology, the IPS65R1K4C6 sets a new bar for both performance and reliability. It's specialized for applications that require 650V rating, thereby offering solutions to a broad range of high voltage needs. The CoolMos C6 Power Transistor bestows just not on-paper performance but also field-proven reliability in many high voltage applications.

As a trusted Infineon Technologies distributor, Nantian Electronics maintains a robust inventory of the IPS65R1K4C6. To fully cater to your needs, we also provide a comprehensive set of IPS65R1K4C6 parameters, a detailed IPS65R1K4C6 Datasheet PDF and pin diagram instructions, all available for download to ensure you have all the information you need.

Infineon IPS65R1K4C6 part in tube

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