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Mitsubishi CM75YE13-12F

Manufacturer Part Number : CM75YE13-12F
Manufacturer : Mitsubishi
Description : IGBT Module VCC = 300V IC = 75A
Lead Free Status / RoHS Status : Lead free / RoHS Compliant
Datasheet : CM75YE13-12F.PDF CM75YE13-12F PDF
EDA / CAD Models : CM75YE13-12F by SnapEDA
Quantity:
483 484 601349 /datasheets/Modules/Mitsubishi-CM75YE13-12F-910201.pdf mitsubishi/cm75ye13-12f 601349
ParameterConditionsMinTypMaxUnit
Collector-Cutoff Current (ICES)VCE = VCES, VGE = 0V--1mA
Gate-Emitter Threshold Voltage (VGE(th))IC = 7.5mA, VCE = 10V567Volts
Gate Leakage Current (IGES)VGE = VGES, VCE = 0V--20μA
Collector-Emitter Saturation Voltage (VCE(sat))IC = 75A, VGE = 15V, Tj = 25°C-1.62.2Volts
IC = 75A, VGE = 15V, Tj = 125°C-1.6-Volts
Input Capacitance (Cies)VCE = 10V, VGE = 0V--20nF
Output Capacitance (Coes)--1.4nF
Reverse Transfer Capacitance (Cres)--0.75nF
Total Gate Charge (QG)VCC = 300V, IC = 75A, VGE = 15V-465-nC
Turn-on Delay Time (td(on))VCC = 300V, IC = 75A--450ns
Turn-on Rise Time (tr)VGE1 = VGE2 = 15V--200ns
Turn-off Delay Time (td(off))RG = 25Ω--800ns
Turn-off Fall Time (tf)Inductive Load Switching Operation--300ns
Reverse Recovery Time (trr*1)IE = 75A--200ns
Reverse Recovery Charge (Qrr*1)-0.68-μC
Emitter-Collector Voltage (VEC*1)IE = 75A, VGE = 0V--2.8Volts
External Gate Resistance (RG)
25-83Ω

Introduction to the CM75YE13-12F

The CM75YE13-12F, from Mitsubishi Electric, is a high-performance IGBT (Insulated Gate Bipolar Transistor) module, tailored for three-level inverter topologies. This product is a key component in applications demanding high efficiency, improved output waveform quality, and reduced noise. Mitsubishi's innovative approach in the design of the CM75YE13-12F reflects their commitment to advancing power technology and meeting diverse industrial requirements.

CM75YE13-12F

CM75YE13-12F

Key Specifications

The CM75YE13-12F excels in controlling and managing power in various challenging applications. It features a collector-cutoff current of 1 mA, a gate-emitter threshold voltage ranging from 5 to 7 volts, and a collector-emitter saturation voltage of 1.6 to 2.2 volts, ensuring efficient operation. Its design also includes an input capacitance of 20 nF and a total gate charge of 465 nC, facilitating quick response times and efficient switching.

Technology and Design

Designed for three-level (neutral point clamped) topologies, the CM75YE13-12F stands out for its ability to improve efficiency and output waveform quality in various settings. This module is especially beneficial in scenarios where low output noise is crucial or where long motor leads create voltage surge issues. Mitsubishi’s use of advanced semiconductor technology enhances the module’s performance, making it a preferred choice for high-demand applications.

Efficiency and Performance

The CM75YE13-12F is engineered for high efficiency and optimal performance. Features like smaller output voltage steps help in reducing surge voltage, while its low output ripple current contributes to maintaining the integrity of power output. The module's design allows for lower modulation frequency while retaining high-quality output waveform, crucial for applications that require precise power control.

Applications

This IGBT module is ideal for a variety of applications, including three-level inverter topologies, solar power inverters, high-efficiency UPS systems, and setups involving long motor leads. Its design and performance make it well-suited for scenarios where power efficiency, reliability, and noise reduction are paramount. The CM75YE13-12F's versatility and efficiency make it a key component in the advancement of power electronics and energy management solutions.

Ordering Information

Mitsubishi is the manufacturer of the CM75YE13-12F, which is available in stock at Nantian. The reference price for CM75YE13-12F can be found by referring to Mitsubishi or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the CM75YE13-12F datasheet PDF and pin diagram description that are available for download.

The CM75YE13-12F has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.

CM75YE13-12F pin configuration

CM75YE13-12F pin configuration

All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to CM75YE13-12F could be downloaded from Nantian's platform.

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Technical Parameters of CM75YE13-12F

ParameterConditionsMinTypMaxUnit
Collector-Cutoff Current (ICES)VCE = VCES, VGE = 0V--1mA
Gate-Emitter Threshold Voltage (VGE(th))IC = 7.5mA, VCE = 10V567Volts
Gate Leakage Current (IGES)VGE = VGES, VCE = 0V--20μA
Collector-Emitter Saturation Voltage (VCE(sat))IC = 75A, VGE = 15V, Tj = 25°C-1.62.2Volts
IC = 75A, VGE = 15V, Tj = 125°C-1.6-Volts
Input Capacitance (Cies)VCE = 10V, VGE = 0V--20nF
Output Capacitance (Coes)--1.4nF
Reverse Transfer Capacitance (Cres)--0.75nF
Total Gate Charge (QG)VCC = 300V, IC = 75A, VGE = 15V-465-nC
Turn-on Delay Time (td(on))VCC = 300V, IC = 75A--450ns
Turn-on Rise Time (tr)VGE1 = VGE2 = 15V--200ns
Turn-off Delay Time (td(off))RG = 25Ω--800ns
Turn-off Fall Time (tf)Inductive Load Switching Operation--300ns
Reverse Recovery Time (trr*1)IE = 75A--200ns
Reverse Recovery Charge (Qrr*1)-0.68-μC
Emitter-Collector Voltage (VEC*1)IE = 75A, VGE = 0V--2.8Volts
External Gate Resistance (RG)
25-83Ω

Product Details

Introduction to the CM75YE13-12F

The CM75YE13-12F, from Mitsubishi Electric, is a high-performance IGBT (Insulated Gate Bipolar Transistor) module, tailored for three-level inverter topologies. This product is a key component in applications demanding high efficiency, improved output waveform quality, and reduced noise. Mitsubishi's innovative approach in the design of the CM75YE13-12F reflects their commitment to advancing power technology and meeting diverse industrial requirements.

CM75YE13-12F

CM75YE13-12F

Key Specifications

The CM75YE13-12F excels in controlling and managing power in various challenging applications. It features a collector-cutoff current of 1 mA, a gate-emitter threshold voltage ranging from 5 to 7 volts, and a collector-emitter saturation voltage of 1.6 to 2.2 volts, ensuring efficient operation. Its design also includes an input capacitance of 20 nF and a total gate charge of 465 nC, facilitating quick response times and efficient switching.

Technology and Design

Designed for three-level (neutral point clamped) topologies, the CM75YE13-12F stands out for its ability to improve efficiency and output waveform quality in various settings. This module is especially beneficial in scenarios where low output noise is crucial or where long motor leads create voltage surge issues. Mitsubishi’s use of advanced semiconductor technology enhances the module’s performance, making it a preferred choice for high-demand applications.

Efficiency and Performance

The CM75YE13-12F is engineered for high efficiency and optimal performance. Features like smaller output voltage steps help in reducing surge voltage, while its low output ripple current contributes to maintaining the integrity of power output. The module's design allows for lower modulation frequency while retaining high-quality output waveform, crucial for applications that require precise power control.

Applications

This IGBT module is ideal for a variety of applications, including three-level inverter topologies, solar power inverters, high-efficiency UPS systems, and setups involving long motor leads. Its design and performance make it well-suited for scenarios where power efficiency, reliability, and noise reduction are paramount. The CM75YE13-12F's versatility and efficiency make it a key component in the advancement of power electronics and energy management solutions.

Ordering Information

Mitsubishi is the manufacturer of the CM75YE13-12F, which is available in stock at Nantian. The reference price for CM75YE13-12F can be found by referring to Mitsubishi or Nantian's listings. For detailed parameters and understanding its functionality, you can refer to the CM75YE13-12F datasheet PDF and pin diagram description that are available for download.

The CM75YE13-12F has a wide range of applications as outlined in DSP Datasheet PDF. To further understand how it works, you can find usage methods along with circuit diagrams within these resources. For comprehensive electronics tutorials on using this component, these documents should prove highly beneficial.

CM75YE13-12F pin configuration

CM75YE13-12F pin configuration

All relevant information including datasheets, pin diagrams, circuit diagrams and tutorials related to CM75YE13-12F could be downloaded from Nantian's platform.

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