2SA1709T-EPN-AN--1.jpg 2SA1709T-EPN-AN--1.jpg
Image shown is a representation only. Exact specifications should be obtain- ed from the product data sheet.

ON Semiconductor 2SA1709T-EPN-AN

Manufacturer Part Number : 2SA1709T-EPN-AN
Manufacturer : ON Semiconductor
Description : BIP PNP 2A 100V
Lead Free Status / RoHS Status : Lead free / RoHS Compliant
Datasheet : 2SA1709T-EPN-AN.PDF 2SA1709T-EPN-AN PDF
EDA / CAD Models : 2SA1709T-EPN-AN by SnapEDA
Quantity:
1780 1791 7626769 /datasheets/Discrete Semiconductor Products/2SA1709T-EPN-AN--1.pdf on-semiconductor/2sa1709t-epn-an 7626769
TypeDescription
CategoryDiscrete Semiconductor Products TransistorsBipolar (BJT) Single Bipolar Transistors
Mfronsemi-ON Semiconductor
Series-
PackagingBulk
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 100mA, 5V
Power - Max1 W
Frequency - Transition120MHz
Operating Temperature150°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Package / CaseSC-71
Supplier Device Package3-NMP


The 2SA1709T-EPN-AN, produced by ON Semiconductor, is a high-performance Bipolar Transistor. With specialization in controlling a flow of electrical current across a device, this PNP/NPN Single NM transistor is capable of handling high voltage and large current operations. This superior component has a substantial negative voltage capacity of 100V and can carry a considerable current up to negative 2A. Its low VCE(sat) rating ensures efficient operation under various conditions, providing a reliable solution for a wide range of applications and circuits.

ON Semiconductor 2SA1709T-EPN-AN genuine part picture

ON Semiconductor 2SA1709T-EPN-AN Package Dimensions:

ON Semiconductor 2SA1709T-EPN-AN Package Dimensions

This transistor has been constructed with the advanced FBET and MBIT processes. As these processes enhance the transistor's features, they contribute to a high breakdown voltage capability and a significant current capacity. In addition, they push its performance a step further by ensuring a fast switching speed, a critical attribute when quick response times are required. The fast switching speed coupled with its large current capacity allows the 2SA1709T-EPN-AN to be an excellent choice for robust operation and high-speed control circuits.

ON Semiconductor 2SA1709T-EPN-AN Package Original Label

ON Semiconductor 2SA1709T-EPN-AN Package Original Label

As an esteemed distributor of ON Semiconductor products, Nantian Electronics maintains a substantial inventory of the 2SA1709T-EPN-AN. To facilitate the integration of this advanced component into your projects, they provide valuable resources like the 2SA1709T-EPN-AN datasheet PDF and pin diagram instructions for download. These resources empower engineers and developers to understand, implement, and optimize this semiconductor with simplicity and ease.

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Technical Parameters of 2SA1709T-EPN-AN

TypeDescription
CategoryDiscrete Semiconductor Products TransistorsBipolar (BJT) Single Bipolar Transistors
Mfronsemi-ON Semiconductor
Series-
PackagingBulk
Part StatusActive
Transistor TypePNP
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)100nA
DC Current Gain (hFE) (Min) @ Ic, Vce140 @ 100mA, 5V
Power - Max1 W
Frequency - Transition120MHz
Operating Temperature150°C (TJ)
Grade-
Qualification-
Mounting TypeThrough Hole
Package / CaseSC-71
Supplier Device Package3-NMP


Product Details

The 2SA1709T-EPN-AN, produced by ON Semiconductor, is a high-performance Bipolar Transistor. With specialization in controlling a flow of electrical current across a device, this PNP/NPN Single NM transistor is capable of handling high voltage and large current operations. This superior component has a substantial negative voltage capacity of 100V and can carry a considerable current up to negative 2A. Its low VCE(sat) rating ensures efficient operation under various conditions, providing a reliable solution for a wide range of applications and circuits.

ON Semiconductor 2SA1709T-EPN-AN genuine part picture

ON Semiconductor 2SA1709T-EPN-AN Package Dimensions:

ON Semiconductor 2SA1709T-EPN-AN Package Dimensions

This transistor has been constructed with the advanced FBET and MBIT processes. As these processes enhance the transistor's features, they contribute to a high breakdown voltage capability and a significant current capacity. In addition, they push its performance a step further by ensuring a fast switching speed, a critical attribute when quick response times are required. The fast switching speed coupled with its large current capacity allows the 2SA1709T-EPN-AN to be an excellent choice for robust operation and high-speed control circuits.

ON Semiconductor 2SA1709T-EPN-AN Package Original Label

ON Semiconductor 2SA1709T-EPN-AN Package Original Label

As an esteemed distributor of ON Semiconductor products, Nantian Electronics maintains a substantial inventory of the 2SA1709T-EPN-AN. To facilitate the integration of this advanced component into your projects, they provide valuable resources like the 2SA1709T-EPN-AN datasheet PDF and pin diagram instructions for download. These resources empower engineers and developers to understand, implement, and optimize this semiconductor with simplicity and ease.

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