Transistors - IGBTs - Modules

Transistors - IGBTs - Modules are advanced electronic components used to efficiently switch and amplify electrical power in a wide range of applications. An IGBT, which stands for Insulated Gate Bipolar Transistor, is a type of power transistor that combines the simplicity of a Field-Effect Transistor (FET) with the high-current and low-saturation-voltage capability of a bipolar transistor. The IGBT module is an integrated unit that includes the IGBT as well as freewheeling diodes, which are necessary for performance and reliability. These modules function mainly to control and convert electric power efficiently in electric vehicles, industrial motors, power grids, and renewable energy systems like inverters for solar panels.

The main characteristics of Transistors - IGBTs - Modules include high efficiency, fast switching speeds, and the ability to handle large voltages and currents. These attributes make them crucial in applications that require high power density and energy efficiency, such as in electric cars where they manage the electrical energy between the battery and the motor. The high switching frequency also enables compact and lightweight designs of power electronics. Renowned manufacturers of Transistors - IGBTs - Modules include Infineon Technologies, Fuji Electric, ON Semiconductor, and Mitsubishi Electric, among others.

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Description
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IGBT 1200V 110A 357W D1
RFQ
IGBT MOD TRENCH ASYM BRIDGE SP6
RFQ
IGBT MOD TRENCH DL BUCK CHOP SP3
RFQ
MOD IGBT 1200V 140A SP3
RFQ
IGBT BOOST CHOP 600V 225A SP1
RFQ
IGBT MODULE VCES 1200V 400A
RFQ
IGBT MOD 1700V 75A PKG S CRCT:B
RFQ
IGBT MODULE VCES 650V 300A
RFQ
POWER MODULE - IGBT
RFQ
IGBT MODULE TRENCH PHASE LEG D1
RFQ
IGBT 1700V 75A 312W SP4
RFQ
IGBT 1200V 440A 1250W D3
RFQ
IGBT NPT BST CHOP FULL BRDG SP6P
RFQ
IGBT NPT BOOST CHOP 1200V 400A S
RFQ
IGBT MODULE VCES 600V 10A
RFQ
IGBT 1200V 110A 357W SP1
RFQ
IGBT 1200V 360A 1136W INT-A-PAK
RFQ
IGBT 1200V 140A 480W SP1
RFQ
IGBT MODULE VCES 1700V 800A
RFQ
 
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