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Microsemi Corporation APT65GP60L2DQ2G

Manufacturer Part Number : APT65GP60L2DQ2G
Manufacturer : Microsemi Corporation
Description : IGBT 600V 198A 833W TO264
Lead Free Status / RoHS Status : Lead free / RoHS Compliant
Datasheet : APT65GP60L2DQ2G.PDF APT65GP60L2DQ2G PDF
Download Datasheet : APT65GP60L2DQ2G Details.PDF APT65GP60L2DQ2G PDF
EDA / CAD Models : APT65GP60L2DQ2G by SnapEDA
Quantity:
287 309 6579948 Microsemi-Corporation/APT65GP60L2DQ2G 6579948

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Technical Parameters of APT65GP60L2DQ2G

Series:POWER MOS 7?
Diode Configuration:PT
Diode Type:198A
FET Type:600V
IGBT Type:250A
Structure:2.7V @ 15V, 65A
Transistor Type:-
Triac Type:605米J (on), 895米J (off)
Type:Standard
Voltage:210nC
Voltage - Breakover:833W
Voltage - Off State:30ns/90ns
Voltage - Zener (Nom) (Vz):400V, 65A, 5 Ohm, 15V

Product Details

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